中国物理B ›› 2026, Vol. 35 ›› Issue (2): 27504-027504.doi: 10.1088/1674-1056/adf6a5
Chengbo Zhao(赵诚博)1, Bowei Han(韩博纬)1, Yuchen Zhao(赵宇辰)2, Yang Sun(孙洋)2, Lichen Wang(王利晨)3, Ruoshui Liu(刘若水)3, Yunzhong Chen(陈允忠)2, and Dengjing Wang(王登京)1,†
Chengbo Zhao(赵诚博)1, Bowei Han(韩博纬)1, Yuchen Zhao(赵宇辰)2, Yang Sun(孙洋)2, Lichen Wang(王利晨)3, Ruoshui Liu(刘若水)3, Yunzhong Chen(陈允忠)2, and Dengjing Wang(王登京)1,†
摘要: BaFe$_{12}$O$_{19}$ (BaM) thin films with thicknesses ranging from 15 nm-200 nm were deposited on Al$_{2}$O$_{3}$(0001) substrates by pulsed laser deposition (PLD). X-ray diffraction patterns show that a buffer layer with a thickness of nearly 60 nm forms on the substrate, and then a $c$-axis perpendicularly oriented BaM thin film grows on the buffer layer. Atomic force microscopy results indicate that the BaM thin film exhibits a spiral island growth mode on the buffer layer. Magnetic hysteresis loop results confirm that the buffer layer exhibits no significant magnetic anisotropy, while the BaM thin film exhibits perpendicular magnetic anisotropy. The out-of-plane coercivity decreases with increasing BaM thin-film thickness due to the combined effect of grain size growth and lattice strain relaxation. The 200 nm thick film exhibits optimum magnetic properties with $M_{\rm s}=319 $ emu/cm$^{3}$ and $H_{\rm c}=1546 $ Oe.
中图分类号: (Magnetic properties of thin films, surfaces, and interfaces)