中国物理B ›› 2026, Vol. 35 ›› Issue (4): 40502-040502.doi: 10.1088/1674-1056/ae2abb

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Quantum thermoelectric diodes and transistors with squeezed reservoir engineering

Ziming Wang(王子明)1,2, Gaoyuan Chen(陈高远)1,2, Yongkang Liu(刘永康)1,2, Chenhui Yu(俞晨晖)1,2, Yue Wu(吴越)3, Zi Wang(王子)4,†, Hongzhao Sun(孙红照)1,2,‡, and Jincheng Lu(陆金成)1,2,§   

  1. 1 Key Laboratory of Intelligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China;
    2 Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China;
    3 Suzhou Wujiang District Xinsheng Experimental School, Suzhou 215009, China;
    4 Department of Physics, National University of Singapore, Singapore 117551, Singapore
  • 收稿日期:2025-09-13 修回日期:2025-12-04 接受日期:2025-12-10 发布日期:2026-04-13
  • 通讯作者: Zi Wang, Hongzhao Sun, Jincheng Lu E-mail:wangzi@nus.edu.sg;sunhongzhao@usts.edu.cn;jinchenglu@usts.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12305050 and 52302298) and the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 23KJB140017).

Quantum thermoelectric diodes and transistors with squeezed reservoir engineering

Ziming Wang(王子明)1,2, Gaoyuan Chen(陈高远)1,2, Yongkang Liu(刘永康)1,2, Chenhui Yu(俞晨晖)1,2, Yue Wu(吴越)3, Zi Wang(王子)4,†, Hongzhao Sun(孙红照)1,2,‡, and Jincheng Lu(陆金成)1,2,§   

  1. 1 Key Laboratory of Intelligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China;
    2 Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China;
    3 Suzhou Wujiang District Xinsheng Experimental School, Suzhou 215009, China;
    4 Department of Physics, National University of Singapore, Singapore 117551, Singapore
  • Received:2025-09-13 Revised:2025-12-04 Accepted:2025-12-10 Published:2026-04-13
  • Contact: Zi Wang, Hongzhao Sun, Jincheng Lu E-mail:wangzi@nus.edu.sg;sunhongzhao@usts.edu.cn;jinchenglu@usts.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12305050 and 52302298) and the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 23KJB140017).

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摘要： This work investigates inelastic thermoelectric systems exhibiting tight relations among electronic charge, electronic heat, and photonic heat currents. By employing a double quantum dot setup interacting with a squeezed photon reservoir, we show that such architectures can operate as high-performance quantum thermoelectric diodes and transistors. Central to this capability is the role of quantum squeezing, which markedly enhances the rectification of both charge and heat currents. Moreover, we demonstrate that a photon-assisted inelastic transport mechanism sustains a thermal transistor effect even within the linear-response regime — a regime where conventional elastic devices typically fail to amplify heat currents. Notably, quantum squeezing further enhances the thermal gain, underscoring its utility in quantum heat control. These results not only deepen our understanding of nonequilibrium quantum thermoelectrics but also provide a viable pathway toward designing devices with tailored energy-conversion functionalities through quantum reservoir engineering.

关键词: thermoelectrics, quantum thermodynamics, diode, transistors

Abstract: This work investigates inelastic thermoelectric systems exhibiting tight relations among electronic charge, electronic heat, and photonic heat currents. By employing a double quantum dot setup interacting with a squeezed photon reservoir, we show that such architectures can operate as high-performance quantum thermoelectric diodes and transistors. Central to this capability is the role of quantum squeezing, which markedly enhances the rectification of both charge and heat currents. Moreover, we demonstrate that a photon-assisted inelastic transport mechanism sustains a thermal transistor effect even within the linear-response regime — a regime where conventional elastic devices typically fail to amplify heat currents. Notably, quantum squeezing further enhances the thermal gain, underscoring its utility in quantum heat control. These results not only deepen our understanding of nonequilibrium quantum thermoelectrics but also provide a viable pathway toward designing devices with tailored energy-conversion functionalities through quantum reservoir engineering.

Key words: thermoelectrics, quantum thermodynamics, diode, transistors

中图分类号:  (Thermodynamics)

  • 05.70.-a
72.20.Pa (Thermoelectric and thermomagnetic effects) 85.30.-z (Semiconductor devices) 05.60.Gg (Quantum transport)