中国物理B ›› 2026, Vol. 35 ›› Issue (4): 44205-044205.doi: 10.1088/1674-1056/ae0639

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Advancing III-phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer

Anum, Muhammad Usman†, Usman Habib, and Shazma Ali   

  1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Swabi, Khyber Pakhtunkhwa, Pakistan
  • 收稿日期:2025-07-11 修回日期:2025-09-09 接受日期:2025-09-12 发布日期:2026-04-13
  • 通讯作者: Muhammad Usman E-mail:usmanishfaq@yahoo.com
  • 基金资助:
    The authors are obliged to Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) for providing the needed resources for this research.

Advancing III-phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer

Anum, Muhammad Usman†, Usman Habib, and Shazma Ali   

  1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Swabi, Khyber Pakhtunkhwa, Pakistan
  • Received:2025-07-11 Revised:2025-09-09 Accepted:2025-09-12 Published:2026-04-13
  • Contact: Muhammad Usman E-mail:usmanishfaq@yahoo.com
  • Supported by:
    The authors are obliged to Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) for providing the needed resources for this research.

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摘要： Gallium indium phosphide (GaInP)/aluminum gallium indium phosphide (AlGaInP) red-emitting active region has been numerically employed and investigated in III-V light-emitting diodes (LEDs) in this work. We have employed ternary aluminum gallium phosphide (AlGaP) electron blocking layer (EBL) and graded AlGaP EBL (or GEBL) separately in the red-emitting LED. According to the simulation results, improvements in internal quantum efficiency (IQE), radiative recombination rate ($R_{\rm rad})$, and carrier concentrations have been observed. Up to 9% decrease in efficiency droop is observed in red-emitting LEDs with ternary EBLs. Good carrier confinement has resulted in high $R_{\rm rad}$ and, thus, increased optical output. The proposed EBLs may, thus, be adopted due to their high optical output in red-emitting LEDs, particularly for high current applications.

关键词: III-phosphide, electron blocking layer, efficiency, red emission, light-emitting diode, radiative recombination

Abstract: Gallium indium phosphide (GaInP)/aluminum gallium indium phosphide (AlGaInP) red-emitting active region has been numerically employed and investigated in III-V light-emitting diodes (LEDs) in this work. We have employed ternary aluminum gallium phosphide (AlGaP) electron blocking layer (EBL) and graded AlGaP EBL (or GEBL) separately in the red-emitting LED. According to the simulation results, improvements in internal quantum efficiency (IQE), radiative recombination rate ($R_{\rm rad})$, and carrier concentrations have been observed. Up to 9% decrease in efficiency droop is observed in red-emitting LEDs with ternary EBLs. Good carrier confinement has resulted in high $R_{\rm rad}$ and, thus, increased optical output. The proposed EBLs may, thus, be adopted due to their high optical output in red-emitting LEDs, particularly for high current applications.

Key words: III-phosphide, electron blocking layer, efficiency, red emission, light-emitting diode, radiative recombination

中图分类号:  (Efficiency, stability, gain, and other operational parameters)

  • 42.60.Lh
71.55.Eq (III-V semiconductors) 78.60.-b (Other luminescence and radiative recombination) 85.60.Bt (Optoelectronic device characterization, design, and modeling)