中国物理B ›› 2025, Vol. 34 ›› Issue (7): 78501-078501.doi: 10.1088/1674-1056/adcd45

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Single event burnout in SiC MOSFETs induced by nuclear reactions with high-energy oxygen ions

Shi-Wei Zhao(赵世伟)1,2, Bing Ye(叶兵)1,2,3, Yu-Zhu Liu(刘郁竹)1,2, Xiao-Yu Yan(闫晓宇)1, Pei-Pei Hu(胡培培)1, Teng Zhang(张腾)4, Peng-Fei Zhai(翟鹏飞)1,2,3, Jing-Lai Duan(段敬来)1,2,3, and Jie Liu(刘杰)1,2,3,†   

  1. 1 Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China;
    2 School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 State Key Laboratory of Heavy Ion Science and Technology, Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China;
    4 Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 收稿日期:2025-03-02 修回日期:2025-04-13 接受日期:2025-04-16 出版日期:2025-06-18 发布日期:2025-07-07
  • 通讯作者: Jie Liu E-mail:j.liu@impcas.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019 and 62234013) and the National Key Research and Development Program of China (Grant Nos. 2023YFA1609000 and 2022YFB3604001).

Single event burnout in SiC MOSFETs induced by nuclear reactions with high-energy oxygen ions

Shi-Wei Zhao(赵世伟)1,2, Bing Ye(叶兵)1,2,3, Yu-Zhu Liu(刘郁竹)1,2, Xiao-Yu Yan(闫晓宇)1, Pei-Pei Hu(胡培培)1, Teng Zhang(张腾)4, Peng-Fei Zhai(翟鹏飞)1,2,3, Jing-Lai Duan(段敬来)1,2,3, and Jie Liu(刘杰)1,2,3,†   

  1. 1 Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China;
    2 School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 State Key Laboratory of Heavy Ion Science and Technology, Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000, China;
    4 Nanjing Electronic Devices Institute, Nanjing 210016, China
  • Received:2025-03-02 Revised:2025-04-13 Accepted:2025-04-16 Online:2025-06-18 Published:2025-07-07
  • Contact: Jie Liu E-mail:j.liu@impcas.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019 and 62234013) and the National Key Research and Development Program of China (Grant Nos. 2023YFA1609000 and 2022YFB3604001).

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摘要： We investigate the impact of high-energy O ions on the occurrence of single-event burnout (SEB) in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) under various bias conditions. Through a combination of SRIM, GEANT4, and TCAD simulations, we explore the role of secondary ions generated by nuclear reactions between high-energy O ions and SiC materials. These secondary ions, with significantly higher linear energy transfer (LET) values, contribute to electron-hole pair generation, leading to SEB. Our results show that the energy deposition and penetration depth of these secondary ions, especially those with high LET, are sufficient to induce catastrophic SEB in SiC MOSFETs. The study also highlights the critical influence of reverse bias voltage on SEB occurrence and provides insights into the failure mechanisms induced by nuclear reactions with high-energy O ions. This work offers valuable understanding for improving the radiation resistance of SiC-based power devices used in space and high-radiation environments, contributing to the design of more reliable electronics for future space missions.

关键词: heavy ion, silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET), nuclear reactions, single-event burnout (SEB)

Abstract: We investigate the impact of high-energy O ions on the occurrence of single-event burnout (SEB) in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) under various bias conditions. Through a combination of SRIM, GEANT4, and TCAD simulations, we explore the role of secondary ions generated by nuclear reactions between high-energy O ions and SiC materials. These secondary ions, with significantly higher linear energy transfer (LET) values, contribute to electron-hole pair generation, leading to SEB. Our results show that the energy deposition and penetration depth of these secondary ions, especially those with high LET, are sufficient to induce catastrophic SEB in SiC MOSFETs. The study also highlights the critical influence of reverse bias voltage on SEB occurrence and provides insights into the failure mechanisms induced by nuclear reactions with high-energy O ions. This work offers valuable understanding for improving the radiation resistance of SiC-based power devices used in space and high-radiation environments, contributing to the design of more reliable electronics for future space missions.

Key words: heavy ion, silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET), nuclear reactions, single-event burnout (SEB)

中图分类号:  (Field effect devices)

  • 85.30.Tv
61.80.Jh (Ion radiation effects) 51.50.+v (Electrical properties) 84.30.Jc (Power electronics; power supply circuits)