中国物理B ›› 2023, Vol. 32 ›› Issue (6): 64209-064209.doi: 10.1088/1674-1056/ac9180

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Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

Xue-Ke Wang(王雪珂)1, Ya-Bin Sun(孙亚宾)1,†, Zi-Yu Liu(刘子玉)2,‡, Yun Liu(刘赟)1, Xiao-Jin Li(李小进)1, and Yan-Ling Shi(石艳玲)1   

  1. 1 Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
    2 School of Microelectronics, Fudan University, Shanghai 200433, China
  • 收稿日期:2022-04-25 修回日期:2022-09-06 接受日期:2022-09-13 出版日期:2023-05-17 发布日期:2023-05-29
  • 通讯作者: Ya-Bin Sun, Zi-Yu Liu E-mail:ybsun@ee.ecnu.edu.cn;liuziyu@fudan.edu.cn
  • 基金资助:
    Project supported in part by the National Natural Science Foundation of China (Grant No. 61974056), the Natural Science Foundation of Shanghai (Grant No. 19ZR1471300), Shanghai Science and Technology Innovation Action Plan (Grant No. 19511131900), and Shanghai Science and Technology Explorer Plan (Grant No. 21TS1401700).

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

Xue-Ke Wang(王雪珂)1, Ya-Bin Sun(孙亚宾)1,†, Zi-Yu Liu(刘子玉)2,‡, Yun Liu(刘赟)1, Xiao-Jin Li(李小进)1, and Yan-Ling Shi(石艳玲)1   

  1. 1 Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
    2 School of Microelectronics, Fudan University, Shanghai 200433, China
  • Received:2022-04-25 Revised:2022-09-06 Accepted:2022-09-13 Online:2023-05-17 Published:2023-05-29
  • Contact: Ya-Bin Sun, Zi-Yu Liu E-mail:ybsun@ee.ecnu.edu.cn;liuziyu@fudan.edu.cn
  • Supported by:
    Project supported in part by the National Natural Science Foundation of China (Grant No. 61974056), the Natural Science Foundation of Shanghai (Grant No. 19ZR1471300), Shanghai Science and Technology Innovation Action Plan (Grant No. 19511131900), and Shanghai Science and Technology Explorer Plan (Grant No. 21TS1401700).

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摘要： The single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV·cm2/mg, which is much higher than the on-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV·cm2/mg to 10 MeV·cm2/mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increase by 0.014 mA and 0.06 fC, respectively, as the drain bias increases from 0.1 V to 0.9 V. Whether from the horizontal or the vertical direction, the most sensitive hit location is related to wt. The underlying physical mechanism is explored and discussed.

关键词: heavy ion strike, EHBNT-TFET, single event transient (SET), transient drain current

Abstract: The single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV·cm2/mg, which is much higher than the on-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV·cm2/mg to 10 MeV·cm2/mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increase by 0.014 mA and 0.06 fC, respectively, as the drain bias increases from 0.1 V to 0.9 V. Whether from the horizontal or the vertical direction, the most sensitive hit location is related to wt. The underlying physical mechanism is explored and discussed.

Key words: heavy ion strike, EHBNT-TFET, single event transient (SET), transient drain current

中图分类号:  (Environmental and radiation effects on optical elements, devices, and systems)

  • 42.88.+h
85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))