中国物理B ›› 2024, Vol. 33 ›› Issue (1): 16106-16106.doi: 10.1088/1674-1056/acd3e1

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Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

Bin Zhang(张彬)1, Hao Jiang(姜昊)2, Xiao-Dong Xu(徐晓东)2, Tao Ying(应涛)1, Zhong-Li Liu(刘中利)2, Wei-Qi Li(李伟奇)1,3, Jian-Qun Yang(杨剑群)2, and Xing-Ji Li(李兴冀)2,†   

  1. 1 School of Physics, Harbin Institute of Technology, Harbin 150001, China;
    2 School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
    3 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an 710024, China
  • 收稿日期:2023-02-23 修回日期:2023-05-10 接受日期:2023-05-10 出版日期:2023-12-13 发布日期:2023-12-20
  • 通讯作者: Xing-Ji Li E-mail:lxj0218@hit.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11974091, 51973046, U22B2044, and 21673025) and the Open Projects of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2020).

Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

Bin Zhang(张彬)1, Hao Jiang(姜昊)2, Xiao-Dong Xu(徐晓东)2, Tao Ying(应涛)1, Zhong-Li Liu(刘中利)2, Wei-Qi Li(李伟奇)1,3, Jian-Qun Yang(杨剑群)2, and Xing-Ji Li(李兴冀)2,†   

  1. 1 School of Physics, Harbin Institute of Technology, Harbin 150001, China;
    2 School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
    3 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an 710024, China
  • Received:2023-02-23 Revised:2023-05-10 Accepted:2023-05-10 Online:2023-12-13 Published:2023-12-20
  • Contact: Xing-Ji Li E-mail:lxj0218@hit.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11974091, 51973046, U22B2044, and 21673025) and the Open Projects of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2020).

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摘要： Bipolar junction transistors (BJTs) are often used in spacecraft due to their excellent working characteristics. However, the complex space radiation environment induces primary knock-on atoms (PKAs) in BJTs through collisions, resulting in hard-to-recover displacement damage and affecting the performance of electronic components. In this paper, the properties of PKAs induced by typical space heavy ions (C, N, O, Fe) in BJTs are investigated using Monte Carlo simulations. The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low-energy range (17 eV—100 eV) and displays similar features across all tested ions. The PKAs induced by the collision of energetic ions have large forward scattering angles, mainly around 88°. Moreover, the distribution of PKAs within a transistor as a function of depth displays a peak characteristic, and the peak position is linearly proportional to the incident energy at a certain energy range. These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices.

关键词: Monte Carlo simulation, primary knock-on atom (PKA), space-heavy ion, radiation damage

Abstract: Bipolar junction transistors (BJTs) are often used in spacecraft due to their excellent working characteristics. However, the complex space radiation environment induces primary knock-on atoms (PKAs) in BJTs through collisions, resulting in hard-to-recover displacement damage and affecting the performance of electronic components. In this paper, the properties of PKAs induced by typical space heavy ions (C, N, O, Fe) in BJTs are investigated using Monte Carlo simulations. The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low-energy range (17 eV—100 eV) and displays similar features across all tested ions. The PKAs induced by the collision of energetic ions have large forward scattering angles, mainly around 88°. Moreover, the distribution of PKAs within a transistor as a function of depth displays a peak characteristic, and the peak position is linearly proportional to the incident energy at a certain energy range. These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices.

Key words: Monte Carlo simulation, primary knock-on atom (PKA), space-heavy ion, radiation damage

中图分类号:  (Semiconductors)

  • 61.82.Fk
61.80.Jh (Ion radiation effects) 42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)