Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI2 van der Waals heterostructure

doi:10.1088/1674-1056/ad4bbd

中国物理B ›› 2024, Vol. 33 ›› Issue (7): 77303-077303.doi: 10.1088/1674-1056/ad4bbd

所属专题： SPECIAL TOPIC — Valleytronics

Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI₂ van der Waals heterostructure

Xiao-Jing Dong(董晓晶)^1,2 and Chang-Wen Zhang(张昌文)^1,†

1 School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan 250022, China;
2 School of Physics and Physical Engineering, Qufu Normal University, Qufu 273100, China

收稿日期:2024-01-31 修回日期:2024-04-24 接受日期:2024-05-15 出版日期:2024-06-18 发布日期:2024-06-28
通讯作者: Chang-Wen Zhang E-mail:ss_zhangchw@ujn.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 52173283), Taishan Scholar Program of Shandong Province (Grant No. ts20190939), and Independent Cultivation Program of Innovation Team of Jinan City (Grant No. 2021GXRC043).

Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI₂ van der Waals heterostructure

Xiao-Jing Dong(董晓晶)^1,2 and Chang-Wen Zhang(张昌文)^1,†

1 School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan 250022, China;
2 School of Physics and Physical Engineering, Qufu Normal University, Qufu 273100, China

Received:2024-01-31 Revised:2024-04-24 Accepted:2024-05-15 Online:2024-06-18 Published:2024-06-28
Contact: Chang-Wen Zhang E-mail:ss_zhangchw@ujn.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 52173283), Taishan Scholar Program of Shandong Province (Grant No. ts20190939), and Independent Cultivation Program of Innovation Team of Jinan City (Grant No. 2021GXRC043).

1. 2024-077303-SI.pdf(816KB)

摘要/Abstract

摘要： Valley-polarized quantum anomalous Hall effect (VQAHE), combined nontrivial band topology with valleytronics, is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI$_{2}$ heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin-orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In$_{2}$Se$_{3}$, the germanene/MnI$_{2}$/In$_{2}$Se$_{3}$ heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.

关键词: valley-polarized, quantum anomalous Hall effect, ferromagnetic

Abstract: Valley-polarized quantum anomalous Hall effect (VQAHE), combined nontrivial band topology with valleytronics, is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI$_{2}$ heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin-orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In$_{2}$Se$_{3}$, the germanene/MnI$_{2}$/In$_{2}$Se$_{3}$ heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.

Key words: valley-polarized, quantum anomalous Hall effect, ferromagnetic

中图分类号: (Quantum Hall effects)

73.43.-f

73.22.-f (Electronic structure of nanoscale materials and related systems) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections) 79.60.Jv (Interfaces; heterostructures; nanostructures)

Xiao-Jing Dong(董晓晶) and Chang-Wen Zhang(张昌文). Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI₂ van der Waals heterostructure[J]. 中国物理B, 2024, 33(7): 77303-077303.

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Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI₂ van der Waals heterostructure

Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI₂ van der Waals heterostructure

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