中国物理B ›› 2023, Vol. 32 ›› Issue (8): 87506-087506.doi: 10.1088/1674-1056/acd522
Qianqian Wang(王倩倩)1, Jianzhou Zhao(赵建洲)2,1,†, Weikang Wu(吴维康)3,1,‡, Yinning Zhou(周胤宁)4, Qile Li5,6, Mark T. Edmonds5,6, and Shengyuan A. Yang(杨声远)1
Qianqian Wang(王倩倩)1, Jianzhou Zhao(赵建洲)2,1,†, Weikang Wu(吴维康)3,1,‡, Yinning Zhou(周胤宁)4, Qile Li5,6, Mark T. Edmonds5,6, and Shengyuan A. Yang(杨声远)1
摘要: Layered magnetic materials, such as MnBi2Te4, have drawn much attention owing to their potential for realizing two-dimensional (2D) magnetism and possible topological states. Recently, FeBi2Te4, which is isostructural to MnBi2Te4, has been synthesized in experiments, but its detailed magnetic ordering and band topology have not been clearly understood yet. Here, based on first-principles calculations, we investigate the magnetic and electronic properties of FeBi2Te4 in bulk and 2D forms. We show that different from MnBi2Te4, the magnetic ground states of bulk, single-layer, and bilayer FeBi2Te4 all favor a 120° noncollinear antiferromagnetic ordering, and they are topologically trivial narrow-gap semiconductors. For the bilayer case, we find that a quantum anomalous Hall effect with a unit Chern number is realized in the ferromagnetic state, which may be achieved in experiment by an external magnetic field or by magnetic proximity coupling. Our work clarifies the physical properties of the new material system of FeBi2Te4 and reveals it as a potential platform for studying magnetic frustration down to 2D limit as well as quantum anomalous Hall effect.
中图分类号: (Antiferromagnetics)