Interfacial DMI in Fe/Pt thin films grown on different buffer layers

doi:10.1088/1674-1056/ad1b41

中国物理B ›› 2024, Vol. 33 ›› Issue (4): 48501-048501.doi: 10.1088/1674-1056/ad1b41

Interfacial DMI in Fe/Pt thin films grown on different buffer layers

Wen-Jun Zhang(张文君)¹, Fei Wei(魏菲)², Bing Liu(刘冰)¹, Yang Zhou(周阳)², Shi-Shou Kang(康仕寿)^2,†, and Bing Sun(孙兵)^1,‡

1 School of Physics and Electronic Information, Weifang University, Weifang 261061, China;
2 School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2023-10-12 修回日期:2023-12-30 接受日期:2024-01-05 出版日期:2024-03-19 发布日期:2024-03-22
通讯作者: Shi-Shou Kang, Bing Sun E-mail:skang@sdu.edu.cn;wywdsunbing@wfu.edu.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 12074220, 12304151, 12204355, and 12204356) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2022QA085).

Interfacial DMI in Fe/Pt thin films grown on different buffer layers

Wen-Jun Zhang(张文君)¹, Fei Wei(魏菲)², Bing Liu(刘冰)¹, Yang Zhou(周阳)², Shi-Shou Kang(康仕寿)^2,†, and Bing Sun(孙兵)^1,‡

1 School of Physics and Electronic Information, Weifang University, Weifang 261061, China;
2 School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2023-10-12 Revised:2023-12-30 Accepted:2024-01-05 Online:2024-03-19 Published:2024-03-22
Contact: Shi-Shou Kang, Bing Sun E-mail:skang@sdu.edu.cn;wywdsunbing@wfu.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 12074220, 12304151, 12204355, and 12204356) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2022QA085).

摘要/Abstract

摘要： We study the interfacial Dzyaloshinskii—Moriya interactions (i-DMI) of Fe/Pt bilayers grown on Si substrates with MgO, SiO₂, or Ta each as a buffer layer on the basis of wave-vector-resolved Brillouin light scattering (BLS) measurement. The obtained i-DMI energy values for Fe/Pt on MgO, Ta, and SiO₂ buffer layers are 0.359, 0.321, and 0.274 mJ/m², respectively. The large i-DMI value observed in Fe/Pt system on the MgO buffer layer can be attributed to the good interfacial quality and the Rshaba effect at the MgO/Fe interface. Moreover, the MgO/Fe/Pt system, benefiting from better sample quality, exhibits a lower damping factor. Furthermore, layer-resolved first-principles calculations are carried out to gain a more in-depth understanding of the origin of the i-DMI in the Fe/Pt system. The results indicate that in the Fe(110)/Pt(111) system, the substantial DMI energy between Fe spins at the interface is related to a significant change in spin—orbit coupling (SOC) energy in the neighboring Pt layer. In contrast, for the MgO(002)/Fe(002) system, both the DMI and its related SOC energy are concentrated at the interfacial Fe layer. Our investigation will provide a valuable insight into the spintronic community in exploring novel devices with chirality dependence.

关键词: Fe/Pt, i-DMI, BLS, ferromagnetic resonance, magnetic relaxation

Abstract: We study the interfacial Dzyaloshinskii—Moriya interactions (i-DMI) of Fe/Pt bilayers grown on Si substrates with MgO, SiO₂, or Ta each as a buffer layer on the basis of wave-vector-resolved Brillouin light scattering (BLS) measurement. The obtained i-DMI energy values for Fe/Pt on MgO, Ta, and SiO₂ buffer layers are 0.359, 0.321, and 0.274 mJ/m², respectively. The large i-DMI value observed in Fe/Pt system on the MgO buffer layer can be attributed to the good interfacial quality and the Rshaba effect at the MgO/Fe interface. Moreover, the MgO/Fe/Pt system, benefiting from better sample quality, exhibits a lower damping factor. Furthermore, layer-resolved first-principles calculations are carried out to gain a more in-depth understanding of the origin of the i-DMI in the Fe/Pt system. The results indicate that in the Fe(110)/Pt(111) system, the substantial DMI energy between Fe spins at the interface is related to a significant change in spin—orbit coupling (SOC) energy in the neighboring Pt layer. In contrast, for the MgO(002)/Fe(002) system, both the DMI and its related SOC energy are concentrated at the interfacial Fe layer. Our investigation will provide a valuable insight into the spintronic community in exploring novel devices with chirality dependence.

Key words: Fe/Pt, i-DMI, BLS, ferromagnetic resonance, magnetic relaxation

中图分类号: (Dynamic properties?)

75.40.Gb

85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Wen-Jun Zhang(张文君), Fei Wei(魏菲), Bing Liu(刘冰), Yang Zhou(周阳), Shi-Shou Kang(康仕寿), and Bing Sun(孙兵). Interfacial DMI in Fe/Pt thin films grown on different buffer layers[J]. 中国物理B, 2024, 33(4): 48501-048501.

Wen-Jun Zhang(张文君), Fei Wei(魏菲), Bing Liu(刘冰), Yang Zhou(周阳), Shi-Shou Kang(康仕寿), and Bing Sun(孙兵). Interfacial DMI in Fe/Pt thin films grown on different buffer layers[J]. Chin. Phys. B, 2024, 33(4): 48501-048501.

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Interfacial DMI in Fe/Pt thin films grown on different buffer layers

Interfacial DMI in Fe/Pt thin films grown on different buffer layers

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