中国物理B ›› 2024, Vol. 33 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/ad18aa

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Negative magnetoresistance in the antiferromagnetic semimetal V1/3TaS2

Zi Wang(王子)1,†, Xin Peng(彭馨)1,†, Shengnan Zhang(张胜男)2, Yahui Su(苏亚慧)1, Shaodong Lai(赖少东)1, Xuan Zhou(周旋)1, Chunxiang Wu(吴春翔)3, Tingyu Zhou(周霆宇)3, Hangdong Wang(王杭栋)4, Jinhu Yang(杨金虎)4, Bin Chen(陈斌)4, Huifei Zhai(翟会飞)1, Quansheng Wu(吴泉生)2,5, Jianhua Du(杜建华)1,‡, Zhiwei Jiao(焦志伟)1,§, and Minghu Fang(方明虎)3,6,¶   

  1. 1 Department of Physics, China Jiliang University, Hangzhou 310018, China;
    2 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Department of Physics, Zhejiang University, Hangzhou 310027, China;
    4 Department of Physics, Hangzhou Normal University, Hangzhou 310036, China;
    5 University of Chinese Academy of Sciences, Beijing 100049, China;
    6 Collaborative Innovation Center of Advanced Microstructure, Nanjing 210093, China
  • 收稿日期:2023-11-02 修回日期:2023-12-22 接受日期:2023-12-26 出版日期:2024-02-22 发布日期:2024-02-29
  • 通讯作者: Jianhua Du, Zhiwei Jiao, Minghu Fang E-mail:jhdu@cjlu.edu.cn;jiaozw@cjlu.edu.cn;mhfang@zju.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403202), the National Natural Science Foundation of China (Grant Nos. NSFC-12074335, 11974095, 5177115, 11974095, and 12188101), and the Natural Science Foundation of Shaanxi Province of China (Grant No. 2022JM-028).

Negative magnetoresistance in the antiferromagnetic semimetal V1/3TaS2

Zi Wang(王子)1,†, Xin Peng(彭馨)1,†, Shengnan Zhang(张胜男)2, Yahui Su(苏亚慧)1, Shaodong Lai(赖少东)1, Xuan Zhou(周旋)1, Chunxiang Wu(吴春翔)3, Tingyu Zhou(周霆宇)3, Hangdong Wang(王杭栋)4, Jinhu Yang(杨金虎)4, Bin Chen(陈斌)4, Huifei Zhai(翟会飞)1, Quansheng Wu(吴泉生)2,5, Jianhua Du(杜建华)1,‡, Zhiwei Jiao(焦志伟)1,§, and Minghu Fang(方明虎)3,6,¶   

  1. 1 Department of Physics, China Jiliang University, Hangzhou 310018, China;
    2 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Department of Physics, Zhejiang University, Hangzhou 310027, China;
    4 Department of Physics, Hangzhou Normal University, Hangzhou 310036, China;
    5 University of Chinese Academy of Sciences, Beijing 100049, China;
    6 Collaborative Innovation Center of Advanced Microstructure, Nanjing 210093, China
  • Received:2023-11-02 Revised:2023-12-22 Accepted:2023-12-26 Online:2024-02-22 Published:2024-02-29
  • Contact: Jianhua Du, Zhiwei Jiao, Minghu Fang E-mail:jhdu@cjlu.edu.cn;jiaozw@cjlu.edu.cn;mhfang@zju.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403202), the National Natural Science Foundation of China (Grant Nos. NSFC-12074335, 11974095, 5177115, 11974095, and 12188101), and the Natural Science Foundation of Shaanxi Province of China (Grant No. 2022JM-028).

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摘要： Intercalated transition metal dichalcogenides (TMDCs) attract much attention due to their rich properties and potential applications. In this article, we grew successfully high-quality V1/3TaS2 crystals by a vapor transport method. We measured the magnetization, longitudinal resistivity ρxx(T, H), Hall resistivity ρxy(T, H), as well as performed calculations of the electronic band structure. It was found that V1/3TaS2 is an A-type antiferromagnet with the Neel temperature TN = 6.20 K, and exhibits a negative magnetoresistance (MR) near TN. Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

关键词: magnetoresistance, antiferromagnetic semimetal, band structure

Abstract: Intercalated transition metal dichalcogenides (TMDCs) attract much attention due to their rich properties and potential applications. In this article, we grew successfully high-quality V1/3TaS2 crystals by a vapor transport method. We measured the magnetization, longitudinal resistivity ρxx(T, H), Hall resistivity ρxy(T, H), as well as performed calculations of the electronic band structure. It was found that V1/3TaS2 is an A-type antiferromagnet with the Neel temperature TN = 6.20 K, and exhibits a negative magnetoresistance (MR) near TN. Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

Key words: magnetoresistance, antiferromagnetic semimetal, band structure

中图分类号:  (Magnetoresistance)

  • 73.43.Qt
71.20.-b (Electron density of states and band structure of crystalline solids) 75.50.Ee (Antiferromagnetics) 71.55.Ak (Metals, semimetals, and alloys)