Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

doi:10.1088/1674-1056/ad053d

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 17504-17504.doi: 10.1088/1674-1056/ad053d

Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

Huiping Li(李慧平)^1,2, Shuaiwei Pan(潘帅唯)², Zhe Wang(王喆)³, Bin Xiang(向斌)⁴, and Wenguang Zhu(朱文光)^1,2,†

1 International Center for Quantum Design of Functional Materials(ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;
2 Department of Physics, University of Science and Technology of China, Hefei 230026, China;
3 Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China;
4 Department of Materials Science & Engineering, University of Science and Technology of China, Hefei 230026, China

收稿日期:2023-09-01 修回日期:2023-10-18 接受日期:2023-10-20 出版日期:2023-12-13 发布日期:2023-12-29
通讯作者: Wenguang Zhu E-mail:wgzhu@ustc.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2019YFA0210004), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000), and the Fundamental Research Funds for the Central Universities (Grant No. WK3510000013). Computational support was provided by the National Supercomputing Center in Tianjin.

Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

Huiping Li(李慧平)^1,2, Shuaiwei Pan(潘帅唯)², Zhe Wang(王喆)³, Bin Xiang(向斌)⁴, and Wenguang Zhu(朱文光)^1,2,†

1 International Center for Quantum Design of Functional Materials(ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;
2 Department of Physics, University of Science and Technology of China, Hefei 230026, China;
3 Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China;
4 Department of Materials Science & Engineering, University of Science and Technology of China, Hefei 230026, China

Received:2023-09-01 Revised:2023-10-18 Accepted:2023-10-20 Online:2023-12-13 Published:2023-12-29
Contact: Wenguang Zhu E-mail:wgzhu@ustc.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2019YFA0210004), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000), and the Fundamental Research Funds for the Central Universities (Grant No. WK3510000013). Computational support was provided by the National Supercomputing Center in Tianjin.

1. 附件.pdf(1155KB)

摘要/Abstract

摘要： A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording, and further progress in this area is desired. Based on the results of our first-principles calculations and Monte Carlo simulations, we present a theoretical proposal for a stacking-dependent exchange bias in two-dimensional compensated van der Waals ferromagnetic/antiferromagnetic bilayer heterostructures. The exchange bias effect emerges in stacking registries that accommodate inhomogeneous interlayer magnetic interactions between the ferromagnetic layer and different spin sublattices of the antiferromagnetic layer. Moreover, the on/off switching and polarity reversal of the exchange bias can be achieved by interlayer sliding, and the strength can be modulated using an external electric field. Our findings push the limits of exchange bias systems to extreme bilayer thickness in two-dimensional van der Waals heterostructures, potentially stimulating new experimental investigations and applications.

关键词: exchange bias, two-dimensional ferromagnetic/antiferromagnetic bilayers, asymmetric magnetic interaction

Abstract: A clear microscopic understanding of exchange bias is crucial for its application in magnetic recording, and further progress in this area is desired. Based on the results of our first-principles calculations and Monte Carlo simulations, we present a theoretical proposal for a stacking-dependent exchange bias in two-dimensional compensated van der Waals ferromagnetic/antiferromagnetic bilayer heterostructures. The exchange bias effect emerges in stacking registries that accommodate inhomogeneous interlayer magnetic interactions between the ferromagnetic layer and different spin sublattices of the antiferromagnetic layer. Moreover, the on/off switching and polarity reversal of the exchange bias can be achieved by interlayer sliding, and the strength can be modulated using an external electric field. Our findings push the limits of exchange bias systems to extreme bilayer thickness in two-dimensional van der Waals heterostructures, potentially stimulating new experimental investigations and applications.

Key words: exchange bias, two-dimensional ferromagnetic/antiferromagnetic bilayers, asymmetric magnetic interaction

中图分类号: (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

75.70.Cn

75.75.-c (Magnetic properties of nanostructures) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)

Huiping Li(李慧平), Shuaiwei Pan(潘帅唯), Zhe Wang(王喆), Bin Xiang(向斌), and Wenguang Zhu(朱文光). Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers[J]. 中国物理B, 2024, 33(1): 17504-17504.

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Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

Stacking-dependent exchange bias in two-dimensional ferromagnetic/antiferromagnetic bilayers

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