中国物理B ›› 2024, Vol. 33 ›› Issue (7): 77302-077302.doi: 10.1088/1674-1056/ad41ba

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Magnetic and electrical transport properties in GdAlSi and SmAlGe

Jing Gong(巩静)1,2, Huan Wang(王欢)1,2, Xiao-Ping Ma(马小平)1,2, Xiang-Yu Zeng(曾祥雨)1,2, Jun-Fa Lin(林浚发)1,2, Kun Han(韩坤)1,2, Yi-Ting Wang(王乙婷)1,2, and Tian-Long Xia(夏天龙)1,2,3,4,†   

  1. 1 Department of Physics, Renmin University of China, Beijing 100872, China;
    2 Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
    3 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China;
    4 Laboratory for Neutron Scattering, Renmin University of China, Beijing 100872, China
  • 收稿日期:2024-03-20 修回日期:2024-04-16 接受日期:2024-04-23 出版日期:2024-06-18 发布日期:2024-06-20
  • 通讯作者: Tian-Long Xia E-mail:tlxia@ruc.edu.cn
  • 基金资助:
    This work was supported by the National Natural Science Foundation of China (Grant No. 12074425), the National Key R&D Program of China (Grant No. 2019YFA0308602), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 23XNKJ22).

Magnetic and electrical transport properties in GdAlSi and SmAlGe

Jing Gong(巩静)1,2, Huan Wang(王欢)1,2, Xiao-Ping Ma(马小平)1,2, Xiang-Yu Zeng(曾祥雨)1,2, Jun-Fa Lin(林浚发)1,2, Kun Han(韩坤)1,2, Yi-Ting Wang(王乙婷)1,2, and Tian-Long Xia(夏天龙)1,2,3,4,†   

  1. 1 Department of Physics, Renmin University of China, Beijing 100872, China;
    2 Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
    3 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China;
    4 Laboratory for Neutron Scattering, Renmin University of China, Beijing 100872, China
  • Received:2024-03-20 Revised:2024-04-16 Accepted:2024-04-23 Online:2024-06-18 Published:2024-06-20
  • Contact: Tian-Long Xia E-mail:tlxia@ruc.edu.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Grant No. 12074425), the National Key R&D Program of China (Grant No. 2019YFA0308602), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 23XNKJ22).

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摘要： We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals, which possess a LaPtSi-type structure (space group $I$4$_{1}md$). The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature ($T_{\rm N}$). For GdAlSi, a hysteresis loop is observed in the magnetization and magnetoresistance curves within the $ab$ plane when the magnetic field is applied below $T_{\rm N}$, which is around 32 K. Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe, confirming the occurrence of magnetic transitions. In addition, the extracted magnetic entropy at high temperatures is consistent with the theoretical value of $R$ln($2{J}+1$) for $J=7/2$ in Gd$^{3+}$ and $J=5/2$ in Sm$^{3+}$, respectively. SmAlGe also exhibits Schottky-like specific heat contributions. Additionally, both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.

关键词: crystal growth, magnetism, magnetotransport properties, specific heat

Abstract: We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals, which possess a LaPtSi-type structure (space group $I$4$_{1}md$). The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature ($T_{\rm N}$). For GdAlSi, a hysteresis loop is observed in the magnetization and magnetoresistance curves within the $ab$ plane when the magnetic field is applied below $T_{\rm N}$, which is around 32 K. Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe, confirming the occurrence of magnetic transitions. In addition, the extracted magnetic entropy at high temperatures is consistent with the theoretical value of $R$ln($2{J}+1$) for $J=7/2$ in Gd$^{3+}$ and $J=5/2$ in Sm$^{3+}$, respectively. SmAlGe also exhibits Schottky-like specific heat contributions. Additionally, both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.

Key words: crystal growth, magnetism, magnetotransport properties, specific heat

中图分类号:  (Magnetoresistance)

  • 73.43.Qt
75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 81.10.Fq (Growth from melts; zone melting and refining)