中国物理B ›› 2023, Vol. 32 ›› Issue (5): 57305-057305.doi: 10.1088/1674-1056/acbd2e

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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Wen-Hao Zhang(张文浩)1,†, Ma-Guang Zhu(朱马光)2,†, Kang-Hua Yu(余康华)3, Cheng-Zhan Li(李诚瞻)4, Jun Wang(王俊)3, Li Xiang(向立)1, and Yu-Wei Wang(王雨薇)3,‡   

  1. 1 College of Materials Science and Engineering, Hunan University, Changsha 410082, China;
    2 School of Integrated Circuits, Nanjing University, Suzhou 210008, China;
    3 College of Electrical and Information Engineering, Hunan University, Changsha 410082, China;
    4 State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Co., Ltd., Zhuzhou 412001, China
  • 收稿日期:2022-11-30 修回日期:2023-02-03 接受日期:2023-02-20 出版日期:2023-04-21 发布日期:2023-04-21
  • 通讯作者: Yu-Wei Wang E-mail:yuweiwang@hnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52107190 and 62101181) and China Postdoctoral Science Foundation (Grant No. 2021M700203).

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Wen-Hao Zhang(张文浩)1,†, Ma-Guang Zhu(朱马光)2,†, Kang-Hua Yu(余康华)3, Cheng-Zhan Li(李诚瞻)4, Jun Wang(王俊)3, Li Xiang(向立)1, and Yu-Wei Wang(王雨薇)3,‡   

  1. 1 College of Materials Science and Engineering, Hunan University, Changsha 410082, China;
    2 School of Integrated Circuits, Nanjing University, Suzhou 210008, China;
    3 College of Electrical and Information Engineering, Hunan University, Changsha 410082, China;
    4 State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Co., Ltd., Zhuzhou 412001, China
  • Received:2022-11-30 Revised:2023-02-03 Accepted:2023-02-20 Online:2023-04-21 Published:2023-04-21
  • Contact: Yu-Wei Wang E-mail:yuweiwang@hnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52107190 and 62101181) and China Postdoctoral Science Foundation (Grant No. 2021M700203).

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摘要： Lateral type n-channel 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs), fabricated using a current industrial process, are irradiated with gamma rays at different irradiation doses in this paper to carry out a profound study on the generation mechanism of radiation-induced interface traps and oxide trapped charges. Electrical parameters (e.g., threshold voltage, subthreshold swing and channel mobility) of the device before and after irradiation are investigated, and the influence of the channel orientation ($[1\overline{1}00]$ and $[11\overline {2} 0]$) on the radiation effect is discussed for the first time. A positive threshold voltage shift is observed at very low irradiation doses ($< 100$ krad (Si)); the threshold voltage then shifts negatively as the dose increases. It is found that the dependence of interface trap generation on the radiation dose is not the same for doses below and above 100 krad. For irradiation $\rm doses < 100 $ krad, the radiation-induced interface traps with relatively high generation speeds dominate the competition with radiation-induced oxide trapped charges, contributing to the positive threshold voltage shift correspondingly. All these results provide additional insight into the radiation-induced charge trapping mechanism in the SiO$_{2}$/SiC interface.

关键词: SiC MOSFET, gamma-ray irradiation, interface traps, oxide-trapped charges

Abstract: Lateral type n-channel 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs), fabricated using a current industrial process, are irradiated with gamma rays at different irradiation doses in this paper to carry out a profound study on the generation mechanism of radiation-induced interface traps and oxide trapped charges. Electrical parameters (e.g., threshold voltage, subthreshold swing and channel mobility) of the device before and after irradiation are investigated, and the influence of the channel orientation ($[1\overline{1}00]$ and $[11\overline {2} 0]$) on the radiation effect is discussed for the first time. A positive threshold voltage shift is observed at very low irradiation doses ($< 100$ krad (Si)); the threshold voltage then shifts negatively as the dose increases. It is found that the dependence of interface trap generation on the radiation dose is not the same for doses below and above 100 krad. For irradiation $\rm doses < 100 $ krad, the radiation-induced interface traps with relatively high generation speeds dominate the competition with radiation-induced oxide trapped charges, contributing to the positive threshold voltage shift correspondingly. All these results provide additional insight into the radiation-induced charge trapping mechanism in the SiO$_{2}$/SiC interface.

Key words: SiC MOSFET, gamma-ray irradiation, interface traps, oxide-trapped charges

中图分类号:  (Electron states at surfaces and interfaces)

  • 73.20.-r
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 61.80.Az (Theory and models of radiation effects) 85.30.-z (Semiconductor devices)