Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO3/PbZr0.52Ti0.48O3 heterostructures

doi:10.1088/1674-1056/accd58

中国物理B ›› 2023, Vol. 32 ›› Issue (10): 107303-107303.doi: 10.1088/1674-1056/accd58

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO₃/PbZr_0.52Ti_0.48O₃ heterostructures

Zhen-Li Wang(王振礼)¹, Chao-Yang Kang(康朝阳)¹, Cai-Hong Jia(贾彩虹)¹, Hai-Zhong Guo(郭海中)^2,†, and Wei-Feng Zhang(张伟风)^1,‡

1 Center for Topological Functional Materials, Henan University, Kaifeng 475004, China;
2 Key Laboratory of Material Physics(Ministry of Education), School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China

收稿日期:2023-02-20 修回日期:2023-04-04 接受日期:2023-04-17 出版日期:2023-09-21 发布日期:2023-09-21
通讯作者: Hai-Zhong Guo, Wei-Feng Zhang E-mail:hguo@zzu.edu.cn;wfzhang@henu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11974099), the Intelligence Introduction Plan of Henan Province, China in 2021 (Grant No. CXJD2021008), the Plan for Leading Talent of Fundamental Research of the Central China in 2020, and the Key Scientific Research Project of Colleges and Universities in Henan Province, China (Grant No. 21A140005).

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO₃/PbZr_0.52Ti_0.48O₃ heterostructures

Zhen-Li Wang(王振礼)¹, Chao-Yang Kang(康朝阳)¹, Cai-Hong Jia(贾彩虹)¹, Hai-Zhong Guo(郭海中)^2,†, and Wei-Feng Zhang(张伟风)^1,‡

1 Center for Topological Functional Materials, Henan University, Kaifeng 475004, China;
2 Key Laboratory of Material Physics(Ministry of Education), School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China

Received:2023-02-20 Revised:2023-04-04 Accepted:2023-04-17 Online:2023-09-21 Published:2023-09-21
Contact: Hai-Zhong Guo, Wei-Feng Zhang E-mail:hguo@zzu.edu.cn;wfzhang@henu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11974099), the Intelligence Introduction Plan of Henan Province, China in 2021 (Grant No. CXJD2021008), the Plan for Leading Talent of Fundamental Research of the Central China in 2020, and the Key Scientific Research Project of Colleges and Universities in Henan Province, China (Grant No. 21A140005).

摘要/Abstract

摘要： We fabricate SrRuO₃/PbZr_0.52Ti_0.48O₃ heterostructures each with an in-plane tensile-strained SrRuO₃ layer and investigate the effect of an applied electric field on anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed. By applying positive electric field or negative electric field, the intersecting hump-like feature is suppressed or enhanced, respectively. The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field. The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO₃. The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO₃ heterostructures.

关键词: Berry curvature, electric field, anomalous Hall effect, anisotropic magnetoresistance, magnetization rotation

Abstract: We fabricate SrRuO₃/PbZr_0.52Ti_0.48O₃ heterostructures each with an in-plane tensile-strained SrRuO₃ layer and investigate the effect of an applied electric field on anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed. By applying positive electric field or negative electric field, the intersecting hump-like feature is suppressed or enhanced, respectively. The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field. The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO₃. The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO₃ heterostructures.

Key words: Berry curvature, electric field, anomalous Hall effect, anisotropic magnetoresistance, magnetization rotation

中图分类号: (Quantum Hall effects)

73.43.-f

73.43.Qt (Magnetoresistance) 75.60.Jk (Magnetization reversal mechanisms)

Zhen-Li Wang(王振礼), Chao-Yang Kang(康朝阳), Cai-Hong Jia(贾彩虹), Hai-Zhong Guo(郭海中), and Wei-Feng Zhang(张伟风). Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO₃/PbZr_0.52Ti_0.48O₃ heterostructures[J]. 中国物理B, 2023, 32(10): 107303-107303.

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Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO₃/PbZr_0.52Ti_0.48O₃ heterostructures

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO₃/PbZr_0.52Ti_0.48O₃ heterostructures

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