Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb1-xBix)4Te7

doi:10.1088/1674-1056/acd629

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/acd629

Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_1-xBi_x)₄Te₇

Xin Zhang(张鑫)¹, Zhicheng Jiang(江志诚)², Jian Yuan(袁健)¹, Xiaofei Hou(侯骁飞)¹, Xia Wang(王霞)³, Na Yu(余娜)³, Zhiqiang Zou(邹志强)³, Zhengtai Liu(刘正太)^2,6,†, Wei Xia(夏威)^1,5,‡, Zhenhai Yu(于振海)¹, Dawei Shen(沈大伟)⁴, and Yanfeng Guo(郭艳峰)^1,5

1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China;
3 Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
4 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
5 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China;
6 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2023-03-23 修回日期:2023-05-08 接受日期:2023-05-17 发布日期:2023-09-07
通讯作者: Zhengtai Liu, Wei Xia E-mail:ztliu@mail.sim.ac.cn;xiawei2@shanghaitech.edu.cn
基金资助:
Project supported by the Shanghai Science and Technology Innovation Action Plan (Grant No. 21JC1402000), the National Natural Science Foundation of China (Grant No. 12004405), the State Key Laboratory of Functional Materials for Informatics (Grant No. SKL2022), the Double FirstClass Initiative Fund of ShanghaiTech University, the Analytical Instrumentation Center (Grant No. SPST-AIC10112914), SPST, and ShanghaiTech University. W. Xia acknowledges the research fund from the State Key Laboratory of Surface Physics and Department of Physics of Fudan University (Grant No. KF2022_13).

Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_1-xBi_x)₄Te₇

1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China;
3 Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
4 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;
5 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China;
6 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2023-03-23 Revised:2023-05-08 Accepted:2023-05-17 Published:2023-09-07
Contact: Zhengtai Liu, Wei Xia E-mail:ztliu@mail.sim.ac.cn;xiawei2@shanghaitech.edu.cn
Supported by:
Project supported by the Shanghai Science and Technology Innovation Action Plan (Grant No. 21JC1402000), the National Natural Science Foundation of China (Grant No. 12004405), the State Key Laboratory of Functional Materials for Informatics (Grant No. SKL2022), the Double FirstClass Initiative Fund of ShanghaiTech University, the Analytical Instrumentation Center (Grant No. SPST-AIC10112914), SPST, and ShanghaiTech University. W. Xia acknowledges the research fund from the State Key Laboratory of Surface Physics and Department of Physics of Fudan University (Grant No. KF2022_13).

1. 附件.pdf(238KB)

摘要/Abstract

摘要： The van der Waals (vdW) MnSb₄Te₇ is a newly synthesized antiferromagnetic (AFM) topological insulator hosting a robust axion insulator state irrelative to the specific spin structure. However, the intrinsic hole doped character of MnSb₄Te₇ makes the Fermi level far away from the Dirac point of about 180 meV, which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect (QAHE). To shift up the Fermi level close to the Dirac point, the strategy of partially replacing Sb with Bi as Mn(Sb_1-xBi_x)₄Te₇ was tried and the magnetotransport properties, in particular, the anomalous Hall effect, were measured and analyzed. Through the electron doping, the anomalous Hall conductance σ_AH changes from negative to positive between x = 0.3 and 0.5, indicative of a possible topological transition. Besides, a charge neutrality point (CNP) also appears between x = 0.6 and 0.7. The results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism, as well as for the exploration of exotic topological properties.

关键词: anomalous Hall effect, doping, topological materials

Abstract: The van der Waals (vdW) MnSb₄Te₇ is a newly synthesized antiferromagnetic (AFM) topological insulator hosting a robust axion insulator state irrelative to the specific spin structure. However, the intrinsic hole doped character of MnSb₄Te₇ makes the Fermi level far away from the Dirac point of about 180 meV, which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect (QAHE). To shift up the Fermi level close to the Dirac point, the strategy of partially replacing Sb with Bi as Mn(Sb_1-xBi_x)₄Te₇ was tried and the magnetotransport properties, in particular, the anomalous Hall effect, were measured and analyzed. Through the electron doping, the anomalous Hall conductance σ_AH changes from negative to positive between x = 0.3 and 0.5, indicative of a possible topological transition. Besides, a charge neutrality point (CNP) also appears between x = 0.6 and 0.7. The results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism, as well as for the exploration of exotic topological properties.

Key words: anomalous Hall effect, doping, topological materials

中图分类号: (Transition-metal compounds)

72.80.Ga

75.50.Ee (Antiferromagnetics) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 73.43.Nq (Quantum phase transitions)

Xin Zhang(张鑫), Zhicheng Jiang(江志诚), Jian Yuan(袁健), Xiaofei Hou(侯骁飞), Xia Wang(王霞),Na Yu(余娜), Zhiqiang Zou(邹志强), Zhengtai Liu(刘正太), Wei Xia(夏威),Zhenhai Yu(于振海), Dawei Shen(沈大伟), and Yanfeng Guo(郭艳峰). Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_1-xBi_x)₄Te₇[J]. 中国物理B, 2023, 32(9): 97201-097201.

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Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_1-xBi_x)₄Te₇

Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_1-xBi_x)₄Te₇

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