中国物理B ›› 2023, Vol. 32 ›› Issue (5): 57101-057101.doi: 10.1088/1674-1056/ac89e5
Thermal spin molecular logic gates modulated by an electric field
Xingyi Tan(谭兴毅)1,†, Qiang Li(李强)2, and Dahua Ren(任达华)2
- 1 Department of Physics, Chongqing Three Gorges University, Wanzhou 404100, China;
2 College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi 445000, China
Thermal spin molecular logic gates modulated by an electric field
Xingyi Tan(谭兴毅)1,†, Qiang Li(李强)2, and Dahua Ren(任达华)2
- 1 Department of Physics, Chongqing Three Gorges University, Wanzhou 404100, China;
2 College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi 445000, China
摘要： Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.
中图分类号: (Density functional theory, local density approximation, gradient and other corrections)
- 71.15.Mb