中国物理B ›› 2021, Vol. 30 ›› Issue (3): 38501-.doi: 10.1088/1674-1056/abd38f

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  • 收稿日期:2020-09-16 修回日期:2020-11-02 接受日期:2020-12-15 出版日期:2021-02-22 发布日期:2021-03-05

New DDSCR structure with high holding voltage for robust ESD applications

Zi-Jie Zhou(周子杰)1,2, Xiang-Liang Jin(金湘亮)1,2,3,†, Yang Wang(汪洋)1,2, and Peng Dong(董鹏)4   

  1. 1 School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China; 2 Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on a Chip, Xiangtan 411105, China; 3 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China; 4 Super-ESD Microelectronics Technology CO., LTD., Changsha 410100, China
  • Received:2020-09-16 Revised:2020-11-02 Accepted:2020-12-15 Online:2021-02-22 Published:2021-03-05
  • Contact: †Corresponding author. E-mail: jinxl@hunnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61774129, 61827812, and 61704145), the Huxiang High-level Talent Gathering Project from the Hunan Science and Technology Department, China (Grant No. 2019RS1037), and the Changsha Science and Technology Plan Key Projects, China (Grant Nos. kq1801035 and kq1703001).

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Abstract: A novel dual direction silicon-controlled rectifier (DDSCR) with an additional P-type doping and gate (APGDDSCR) is proposed and demonstrated. Compared with the conventional low-voltage trigger DDSCR (LVTDDSCR) that has positive and negative holding voltages of 13.371 V and 14.038 V, respectively, the new DDSCR has high positive and negative holding voltages of 18.781 V and 18.912 V in a single finger device, respectively, and it exhibits suitable enough positive and negative holding voltages of 14.60 V and 14.319 V in a four-finger device for 12-V application. The failure current of APGDDSCR is almost the same as that of LVT-DDSCR in the single finger device, and the four-finger APGDDSCR can achieve positive and negative human-body model (HBM) protection capabilities of 22.281 kV and 23.45 kV, respectively, under 40-V voltage of core circuit failure, benefitting from the additional structure. The new structure can generate a snapback voltage on gate A to increase the current gain of the parasitic PNP in holding voltage. Thus, a sufficiently high holding voltage increased by the structure can ensure that a multi-finger device can also reach a sufficient holding voltage, it is equivalent to solving the non-uniform triggering problem of multi-finger device. The operating mechanism and the gate voltage are both discussed and verified in two-dimensional (2D) simulation and experiemnt.

Key words: dual direction silicon-controlled rectifier (DDSCR), failure current, snapback gate voltage, simulation, transmission line pulsing (TLP)

中图分类号:  (Semiconductor-device characterization, design, and modeling)

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