中国物理B ›› 2020, Vol. 29 ›› Issue (6): 68501-068501.doi: 10.1088/1674-1056/ab8377

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-performance midwavelength infrared detectors based on InAsSb nBn design

Xuan Zhang(张璇), Qing-Xuan Jia(贾庆轩), Ju Sun(孙矩), Dong-Wei Jiang(蒋洞微), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川)   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
    3 Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    4 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 收稿日期:2020-02-15 修回日期:2020-03-15 出版日期:2020-06-05 发布日期:2020-06-05
  • 通讯作者: Guo-Wei Wang, Zhi-Chuan Niu E-mail:wangguowei@semi.ac.cn;zcniu@semi.ac.cn
  • 基金资助:
    Project supported by the National Key Technologies Research and Development Program of China (Grant No. 2018YFA0209104) and the Major Program of the National Natural Science Foundation of China (Grant No. 61790581).

High-performance midwavelength infrared detectors based on InAsSb nBn design

Xuan Zhang(张璇)1,2, Qing-Xuan Jia(贾庆轩)1,2, Ju Sun(孙矩)1,2, Dong-Wei Jiang(蒋洞微)1,2,3, Guo-Wei Wang(王国伟)1,2,3, Ying-Qiang Xu(徐应强)1,2,3, Zhi-Chuan Niu(牛智川)1,2,3,4   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
    3 Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    4 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • Received:2020-02-15 Revised:2020-03-15 Online:2020-06-05 Published:2020-06-05
  • Contact: Guo-Wei Wang, Zhi-Chuan Niu E-mail:wangguowei@semi.ac.cn;zcniu@semi.ac.cn
  • Supported by:
    Project supported by the National Key Technologies Research and Development Program of China (Grant No. 2018YFA0209104) and the Major Program of the National Natural Science Foundation of China (Grant No. 61790581).

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摘要： we report nBn photodetectors based on InAs0.91Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an nBn detector is similar to that of a standard pin detector, but there is special wide bandgap AlAs0.08Sb0.92 barrier layer in the nBn detector, in which the depletion region of nBn detector exists. The nBn design has many advantages, such as low dark current and high quantum efficiency, because the nBn design can suppress the generation-recombination (GR) current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0-1/T indicates the absence of the generation-recombination dark current. We fabricate an nBn detector with a quantum efficiency (QE) maximum of ～ 60% under -0.2-V bias voltage. The InAsSb nBn detectors may be a competitive candidate for midwavelength infrared detector.

关键词: infrared detector, InAsSb, nBn

Abstract: we report nBn photodetectors based on InAs0.91Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an nBn detector is similar to that of a standard pin detector, but there is special wide bandgap AlAs0.08Sb0.92 barrier layer in the nBn detector, in which the depletion region of nBn detector exists. The nBn design has many advantages, such as low dark current and high quantum efficiency, because the nBn design can suppress the generation-recombination (GR) current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0-1/T indicates the absence of the generation-recombination dark current. We fabricate an nBn detector with a quantum efficiency (QE) maximum of ～ 60% under -0.2-V bias voltage. The InAsSb nBn detectors may be a competitive candidate for midwavelength infrared detector.

Key words: infrared detector, InAsSb, nBn

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)