High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy

doi:10.1088/1674-1056/28/2/028503

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 28503-028503.doi: 10.1088/1674-1056/28/2/028503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy

1 School of Energy & Environment Science, Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Ministry of Education, Yunnan Key Laboratory of Opto-electronic Information Technology, Yunnan Normal University, Kunming 650092, China;
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-09-11 修回日期:2018-11-26 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Rui-Ting Hao, Jie Guo, Guo-Wei Wang E-mail:ruitinghao@semi.ac.cn;jieggg1020@sina.com;wangguowei@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774130 11474248, 61176127, 61006085, 61274013, and 61306013, the Key Program for International Science and Technology Cooperation Projects of China (Grant No. 2011DFA62380), and the Ph. D. Programs Foundation of the Ministry of Education of China (Grant No. 20105303120002).

High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy

Fa-Ran Chang(常发冉)¹, Rui-Ting Hao(郝瑞亭)¹, Tong-Tong Qi(齐通通)¹, Qi-Chen Zhao(赵其琛)¹, Xin-Xing Liu(刘欣星)¹, Yong Li(李勇)¹, Kang Gu(顾康)¹, Jie Guo(郭杰)¹, Guo-Wei Wang(王国伟)^2,3, Ying-Qiang Xu(徐应强)^2,3, Zhi-Chuan Niu(牛智川)^2,3

1 School of Energy & Environment Science, Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Ministry of Education, Yunnan Key Laboratory of Opto-electronic Information Technology, Yunnan Normal University, Kunming 650092, China;
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-09-11 Revised:2018-11-26 Online:2019-02-05 Published:2019-02-05
Contact: Rui-Ting Hao, Jie Guo, Guo-Wei Wang E-mail:ruitinghao@semi.ac.cn;jieggg1020@sina.com;wangguowei@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774130 11474248, 61176127, 61006085, 61274013, and 61306013, the Key Program for International Science and Technology Cooperation Projects of China (Grant No. 2011DFA62380), and the Ph. D. Programs Foundation of the Ministry of Education of China (Grant No. 20105303120002).

摘要/Abstract

摘要： In this paper, high material quality Al_0.4In_0.6AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared (FTIR) spectrometer, and atomic force microscope (AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 Å (theoretical value is 30.48 Å), the mismatch between the GaSb substrate and AlInAsSb achieves -162 arcsec, and the root-mean square (RMS) roughness for typical material growths has achieved around 1.6 Å over an area of 10 μm×10 μm. At room temperature, the photoluminescence (PL) spectrum shows a cutoff wavelength of 1.617 μm.

关键词: AlInAsSb, short-wavelength, digital alloy

Abstract: In this paper, high material quality Al_0.4In_0.6AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared (FTIR) spectrometer, and atomic force microscope (AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 Å (theoretical value is 30.48 Å), the mismatch between the GaSb substrate and AlInAsSb achieves -162 arcsec, and the root-mean square (RMS) roughness for typical material growths has achieved around 1.6 Å over an area of 10 μm×10 μm. At room temperature, the photoluminescence (PL) spectrum shows a cutoff wavelength of 1.617 μm.

Key words: AlInAsSb, short-wavelength, digital alloy

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

68.65.Cd (Superlattices) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

常发冉, 郝瑞亭, 齐通通, 赵其琛, 刘欣星, 李勇, 顾康, 郭杰, 王国伟, 徐应强, 牛智川. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy[J]. 中国物理B, 2019, 28(2): 28503-028503.

Fa-Ran Chang(常发冉), Rui-Ting Hao(郝瑞亭), Tong-Tong Qi(齐通通), Qi-Chen Zhao(赵其琛), Xin-Xing Liu(刘欣星), Yong Li(李勇), Kang Gu(顾康), Jie Guo(郭杰), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川). High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy[J]. Chin. Phys. B, 2019, 28(2): 28503-028503.

参考文献 17

[1]	Gallant M, Puetz N, Zemel A and Shepherd F 1988 Appl. Phys. Lett. 52 733 doi: 10.1063/1.99363
[2]	Kozlowski L J, Arias J M, Williams G M, Vural K, Cooper D E, Cabelli S A and Bruce C 1994 Infrared Detectors: State of the Art Ⅱ, 1994, San Diego, CA USA, pp. 93-117
[3]	Tennant W, Lee D, Zandian M, Piquette E and Carmody M 2008 J. Electron. Mater. 37 1406 doi: 10.1007/s11664-008-0426-3
[4]	Lee D, Carmody M, Piquette E, Dreiske P, Chen A, Yulius A, Edwall D, Bhargava S, Zandian M and Tennant W 2016 J. Electron. Mater. 45 4587 doi: 10.1007/s11664-016-4566-6
[5]	Chang J, Su Y K, Jaw D, Shiao H and Lin W 1999 J. Crystal Growth 203 481 doi: 10.1016/S0022-0248(99)00114-1
[6]	Semenov A, Solov'Ev V, Meltser B Y, Terent'ev Y V, Prokopova L and Ivanov S 2005 J. Crystal Growth 278 203 doi: 10.1016/j.jcrysgro.2005.01.007
[7]	Zederbauer T, Andrews A M, MacFarland D, Detz H, Schrenk W and Strasser G 2016 Photonics 3 20 doi: 10.3390/photonics3020020
[8]	Washington-Stokes D, Hogan T P, Chow P C, Golding T D, Kirschbaum U, Littler C L and Lukic R 1999 J. Crystal Growth 201 854
[9]	Tournet J, Rouillard Y and Tournié E 2017 J. Cryst. Growth 477 72 doi: 10.1016/j.jcrysgro.2017.04.001
[10]	Maddox S J, March S D and Bank S R 2016 Cryst. Growth & Des. 16 3582 doi: . Growth
[11]	Vaughn L G 2006 “Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells”, Ph. D. dissertation (New Mexico: University of New Mexico) (in American)
[12]	Vaughn L G, Dawson L R, Pease E A, Lester L F, Xu H, Jiang Y and Gray A L 2005 Physics and Simulation of Optoelectronic Devices XⅢ, 2015, San Jose, California, USA pp. 307
[13]	Lyu Y, Han X, Sun Y, Jiang Z, Guo C, Xiang W, Dong Y, Cui J, Yao Y, Jiang D, Wang G, Xu Y and Niu Z 2018 J. Crystal Growth 482 70 doi: 10.1016/j.jcrysgro.2017.10.035
[14]	Neuberger M 2013 Ⅲ-V semiconducting compounds (Springer Science & Business Media) doi: semiconducting compounds ???Springer Science
[15]	Schwoebel R L and Shipsey E J 1966 J. Appl. Phys. 37 3682 doi: 10.1063/1.1707904
[16]	Chiu T, Tsang W, Ditzenberger J, Chu S and Van der Ziel J 1986 J. Appl. Phys. 60 205 doi: 10.1063/1.337682
[17]	Rodriguez J, Christol P, Cerutti L, Chevrier F and Joullié A 2005 J. Crystal Growth 274 6 doi: 10.1016/j.jcrysgro.2004.09.088

High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy

High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy

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