中国物理B ›› 2019, Vol. 28 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/ab343f
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Xiaolong Cai(蔡小龙), Dong Zhou(周东), Liang Cheng(程亮), Fangfang Ren(任芳芳), Hong Zhong(钟宏), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海)
Xiaolong Cai(蔡小龙)1,2, Dong Zhou(周东)1, Liang Cheng(程亮)1, Fangfang Ren(任芳芳)1, Hong Zhong(钟宏)2, Rong Zhang(张荣)1, Youdou Zheng(郑有炓)1, Hai Lu(陆海)1
摘要:
Four 4H-SiC p-i-n ultraviolet (UV) avalanche photodiode (APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses (0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated. Single photon detection efficiency (SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling. Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate (DCR) confirms that the trap-assisted tunneling (TAT) process is the main source of DCR. The temperature coefficient ranges from -2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers. Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 104 are obtained.
中图分类号: (Semiconductor devices)