Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout

doi:10.1088/1674-1056/ab3436

中国物理B ›› 2019, Vol. 28 ›› Issue (9): 98502-098502.doi: 10.1088/1674-1056/ab3436

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout

Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪)

Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

收稿日期:2019-03-11 修回日期:2019-06-26 出版日期:2019-09-05 发布日期:2019-09-05
通讯作者: Dong-Yue Jin E-mail:dyjin@bjut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61006059 and 61774012), Beijing Municipal Natural Science Foundation, China (Grant No. 4143059), Beijing Municipal Education Committee, China (Grant No. KM201710005027), Postdoctoral Science Foundation of Beijing, China (Grant No. 2015ZZ-11), China Postdoctoral Science Foundation (Grant No. 2015M580951), and Scientific Research Foundation Project of Beijing Future Chip Technology Innovation Center, China (Grant No. KYJJ2016008).

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout

Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪)

Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

Received:2019-03-11 Revised:2019-06-26 Online:2019-09-05 Published:2019-09-05
Contact: Dong-Yue Jin E-mail:dyjin@bjut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61006059 and 61774012), Beijing Municipal Natural Science Foundation, China (Grant No. 4143059), Beijing Municipal Education Committee, China (Grant No. KM201710005027), Postdoctoral Science Foundation of Beijing, China (Grant No. 2015ZZ-11), China Postdoctoral Science Foundation (Grant No. 2015M580951), and Scientific Research Foundation Project of Beijing Future Chip Technology Innovation Center, China (Grant No. KYJJ2016008).

摘要/Abstract

摘要：

Based on the thermal network of the two-dimensional heterojunction bipolar transistors (HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resistance to describe the self-heating and thermal coupling effects, respectively. For HBT cells along the emitter length direction, the thermal coupling resistance is far smaller than the self-heating thermal resistance, and the peak junction temperature is mainly determined by the self-heating thermal resistance. However, the thermal coupling resistance is in the same order with the self-heating thermal resistance for HBT cells along the emitter width direction. Furthermore, the dependence of the thermal resistance matrix on cell spacing along the emitter length direction and cell spacing along the emitter width direction is also investigated, respectively. It is shown that the moderate increase of cell spacings along the emitter length direction and the emitter width direction could effectively lower the self-heating thermal resistance and thermal coupling resistance, and hence the peak junction temperature is decreased, which sheds light on adopting a two-dimensional non-uniform cell spacing layout to improve the uneven temperature distribution. By taking a 2×6 HBTs array for example, a two-dimensional non-uniform cell spacing layout is designed, which can effectively lower the peak junction temperature and reduce the non-uniformity of the dissipated power. For the HBTs array with optimized layout, the high power-handling capability and thermal dissipation capability are kept when the bias voltage increases.

关键词: heterojunction bipolar transistors (HBTs) array, thermal effects, thermal resistance matrix, thermal design

Abstract:

Key words: heterojunction bipolar transistors (HBTs) array, thermal effects, thermal resistance matrix, thermal design

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.80.Fi (Thermoelectric devices) 85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

陈蕊, 金冬月, 张万荣, 王利凡, 郭斌, 陈虎, 殷凌寒, 贾晓雪. Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout[J]. 中国物理B, 2019, 28(9): 98502-098502.

Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪). Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout[J]. Chin. Phys. B, 2019, 28(9): 98502-098502.

参考文献 19

[1]	Hadi R A, Grzyb J, Heinemann B and Pfeiffer R 2013 IEEE J. Solid-state Circuits 48 2002 doi: 10.1109/JSSC.2013.2265493
[2]	Metzger A G, D'Alessandro V, Rinaldi N and Zampardi P J 2013 Microelectron. Reliab. 53 1471 doi: 10.1016/j.microrel.2013.06.013
[3]	Hettrich H and Möller M 2016 IEEE J. Solid-state Circuits 51 2006 doi: 10.1109/JSSC.2016.2569075
[4]	Vincenzo D A, Antonio P C, Lorenzo C, Brian M and Peter J Z 2018 Proceedings of EuroSimE, Toulouse, France, p. 1
[5]	Sun Y B, Fu J, Wang Y D, Zhou W, Zhang W and Liu Z H 2016 Chin. Phys. B 25 048501 doi: 10.1088/1674-1056/25/4/048501
[6]	Fu Q, Zhang W R, Jin D Y, Zhao Y X and Wang X 2016 Chin. Phys. B 25 124401 doi: 10.1088/1674-1056/25/12/124401
[7]	Sun Y B, Li X J, Zhang J Z and Shi Y L 2017 Chin. Phys. B 26 098502 doi: 10.1088/1674-1056/26/9/098502
[8]	Liou L L, Bayraktaroglu B and Huang C I 1996 Solid-State Electron. 39 165 doi: 10.1016/0038-1101(95)96867-N
[9]	Sevimli O, Parker A E, Fattorini A P and Mahon S J 2013 IEEE Trans. Electron. Devices 60 1632 doi: 10.1109/TED.2013.2254117
[10]	Koenig E, Seiler U, Schneider J, Erben U and Schumacher H 1995 Solid-State Electron. 38 775 doi: 10.1016/0038-1101(94)00195-L
[11]	Jin D Y, Zhang W R, Shen P, Xie H Y, Li J, Gan J N, Huang L, Hu N and Huang Y W 2008 2008 International Conference on Microwave and Millimeter Wave Technology, April 21-24, 2008 Nanjing, China, p. 166
[12]	McAlister S P, McKinnon W R, Kovacic S J and Lafontaine H 2004 Solid-State Electron. 48 2001 doi: 10.1016/j.sse.2004.05.047
[13]	Jin D Y, Zhang W R, Xie H Y, Chen L, Shen P and Hu N 2009 Microelectron. Reliab. 49 382 doi: 10.1016/j.microrel.2009.01.008
[14]	Chen L, Zhang W R, Jin D Y, Shen P, Xie H Y, Ding C B, Xiao Y, Sun B T and Wang R Q 2011 Chin. Phys. B 20 018501 doi: 10.1088/1674-1056/20/1/018501
[15]	Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q and Ding C B 2011 Acta Phys. Sin. 60 078501(in Chinese)
[16]	Marano I, D'Alessandro V and Rinaldi N 2009 Solid-State Electron. 53 297 doi: 10.1016/j.sse.2008.12.006
[17]	Zhao X Y, Jin D Y, Zhang W R, Wang X, Guo Y L and Wang D 2016 5th International Symposium on Next-Generation Electronics, May 4-6, 2016 Taiwan, China, p. 1
[18]	Jin D Y, Zhang W R, Chen L, Fu Q, Xiao Y, Wang R Q and Zhao X 2011 Chin. Phys. B 20 064401 doi: 10.1088/1674-1056/20/6/064401
[19]	Lehmann S, Zimmermann Y, Pawlak A and Schröter M 2014 IEEE Trans. Electron. Devices 61 3676 doi: 10.1109/TED.2014.2359994

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout

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