Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

doi:10.1088/1674-1056/28/8/087302

中国物理B ›› 2019, Vol. 28 ›› Issue (8): 87302-087302.doi: 10.1088/1674-1056/28/8/087302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙)

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Electrical and Computer Engineering, Rutgers University, 94 Brett Rd, Piscataway, New Jersey 08854;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2019-04-03 修回日期:2019-06-04 出版日期:2019-08-05 发布日期:2019-08-05
通讯作者: Zengxia Mei, Xiaolong Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405, 61874139, and 11675280).

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Wenxing Huo(霍文星)^1,2, Zengxia Mei(梅增霞)¹, Yicheng Lu(卢毅成)³, Zuyin Han(韩祖银)^1,2, Rui Zhu(朱锐)^1,2, Tao Wang(王涛)^1,2, Yanxin Sui(隋妍心)^1,2, Huili Liang(梁会力)¹, Xiaolong Du(杜小龙)^1,4

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Electrical and Computer Engineering, Rutgers University, 94 Brett Rd, Piscataway, New Jersey 08854;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2019-04-03 Revised:2019-06-04 Online:2019-08-05 Published:2019-08-05
Contact: Zengxia Mei, Xiaolong Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405, 61874139, and 11675280).

摘要/Abstract

摘要：

Dual-active-layer (DAL) amorphous InGaZnO (IGZO) thin-film transistors (TFTs) are fabricated at low temperature without post-annealing. A bottom low-resistance (low-R) IGZO layer and a top high-resistance (high-R) IGZO layer constitute the DAL homojunction with smooth and high-quality interface by in situ modulation of oxygen composition. The performance of the DAL TFT is significantly improved when compared to that of a single-active-layer TFT. A detailed investigation was carried out regarding the effects of the thickness of both layers on the electrical properties and gate bias stress stabilities. It is found that the low-R layer improves the mobility, ON/OFF ratio, threshold voltage and hysteresis voltage by passivating the defects and providing a smooth interface. The high-R IGZO layer has a great impact on the hysteresis, which changes from clockwise to counterclockwise. The best TFT shows a mobility of 5.41 cm²/V…, a sub-threshold swing of 95.0 mV/dec, an ON/OFF ratio of 6.70×10⁷, a threshold voltage of 0.24 V, and a hysteresis voltage of 0.13 V. The value of threshold voltage shifts under positive gate bias stress decreases when increasing the thickness of both layers.

关键词: thin film transistor, InGaZnO, dual-active-layer

Abstract:

Key words: thin film transistor, InGaZnO, dual-active-layer

中图分类号: (II-VI semiconductors)

73.61.Ga

77.55.hf (ZnO) 85.30.-z (Semiconductor devices) 85.30.Tv (Field effect devices)

霍文星, 梅增霞, 卢毅成, 韩祖银, 朱锐, 王涛, 隋妍心, 梁会力, 杜小龙. Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors[J]. 中国物理B, 2019, 28(8): 87302-087302.

Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙). Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors[J]. Chin. Phys. B, 2019, 28(8): 87302-087302.

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Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

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