中国物理B ›› 2011, Vol. 20 ›› Issue (1): 17306-017306.doi: 10.1088/1674-1056/20/1/017306

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Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer

孙钦军, 徐征, 赵谡玲, 张福俊, 高利岩   

  1. Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China; Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
  • 收稿日期:2010-04-26 修回日期:2010-06-11 出版日期:2011-01-15 发布日期:2011-01-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774013, 10974013, 60978060 and 10804006), the Research Fund for the Doctoral Program of Higher Education, China (Grant Nos. 20090009110027, 20070004024 and 20070004031), the Beijing Municipal Science and Technology Commission (Grant No. 1102028), and the National Basic Research Program of China (Grant No. 2010CB327704).

Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer

Sun Qin-Jun(孙钦军)†, Xu Zheng(徐征)‡, Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), and Gao Li-Yan(高利岩)   

  1. Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;  Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
  • Received:2010-04-26 Revised:2010-06-11 Online:2011-01-15 Published:2011-01-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774013, 10974013, 60978060 and 10804006), the Research Fund for the Doctoral Program of Higher Education, China (Grant Nos. 20090009110027, 20070004024 and 20070004031), the Beijing Municipal Science and Technology Commission (Grant No. 1102028), and the National Basic Research Program of China (Grant No. 2010CB327704).

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摘要： The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source--drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/(V·s). It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/(V·s). It indicates that further reducing the contact resistance of OTFTs should be carried out.

关键词: organic thin film transistors, field effect mobility, contact effect, charge drift

Abstract: The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source–drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/(V·s). It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/(V·s). It indicates that further reducing the contact resistance of OTFTs should be carried out.

Key words: organic thin film transistors, field effect mobility, contact effect, charge drift

中图分类号:  (Polymers; organic compounds)

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