Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)2As2

doi:10.1088/1674-1056/28/5/057501

中国物理B ›› 2019, Vol. 28 ›› Issue (5): 57501-057501.doi: 10.1088/1674-1056/28/5/057501

所属专题： Virtual Special Topic — Magnetism and Magnetic Materials

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂

Y Peng(彭毅), S Yu(于爽), G Q Zhao(赵国强), W M Li(李文敏), J F Zhao(赵建发), L P Cao(曹立朋), X C Wang(望贤成), Q Q Liu(刘清青), S J Zhang(张思佳), R Z Yu(于润泽), Z Deng(邓正), X H Zhu(朱小红), C Q Jin(靳常青)

1 College of Materials Science & Engineering, Sichuan University, Chengdu 610064, China;
2 Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

收稿日期:2019-02-02 修回日期:2019-02-25 出版日期:2019-05-05 发布日期:2019-05-05
通讯作者: Z Deng, X H Zhu, C Q Jin E-mail:dengzheng@iphy.ac.cn;xhzhu@scu.edu.cn;Jin@iphy.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0405703), the Ministry of Science and Technology of China (Grant Nos. 2018YFA03057001 and 2015CB921000), and the National Natural Science Foundation of China through the Research Projects (Grant Nos. 11534016 and 61504166).

Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂

Y Peng(彭毅)^1,2, S Yu(于爽)^2,3, G Q Zhao(赵国强)^2,3, W M Li(李文敏)^2,3, J F Zhao(赵建发)^2,3, L P Cao(曹立朋)², X C Wang(望贤成)^2,3, Q Q Liu(刘清青)^2,3, S J Zhang(张思佳)^2,3, R Z Yu(于润泽)^2,3, Z Deng(邓正)^2,3, X H Zhu(朱小红)¹, C Q Jin(靳常青)^2,3,4

1 College of Materials Science & Engineering, Sichuan University, Chengdu 610064, China;
2 Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Received:2019-02-02 Revised:2019-02-25 Online:2019-05-05 Published:2019-05-05
Contact: Z Deng, X H Zhu, C Q Jin E-mail:dengzheng@iphy.ac.cn;xhzhu@scu.edu.cn;Jin@iphy.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0405703), the Ministry of Science and Technology of China (Grant Nos. 2018YFA03057001 and 2015CB921000), and the National Natural Science Foundation of China through the Research Projects (Grant Nos. 11534016 and 61504166).

摘要/Abstract

摘要：

Chemical pressure induced by iso-valent doping has been widely employed to tune physical properties of materials. In this work, we report effects of chemical pressure by substitution of Sb or P into As on a recently discovered diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂, which has the record of reliable Curie temperature of 230 K due to independent charge and spin doping. Sb and P are substituted into As-site to produce negative and positive chemical pressures, respectively. X-ray diffraction results demonstrate the successful chemical solution of dopants. Magnetic properties of both K-under-doped and K-optimal-doped samples are effectively tuned by Sb- and P-doping. The Hall effect measurements do not show decrease in carrier concentrations upon Sb- and P-doping. Impressively, magnetoresistance is significantly improved from 7% to 27% by only 10% P-doping, successfully extending potential application of (Ba,K)(Zn,Mn)₂As₂.

关键词: chemical pressure, (Ba,K)(Zn,Mn)₂As₂, diluted magnetic semiconductor, iso-valent doping

Abstract:

Key words: chemical pressure, (Ba,K)(Zn,Mn)₂As₂, diluted magnetic semiconductor, iso-valent doping

中图分类号: (Magnetic semiconductors)

75.50.Pp

74.62.Fj (Effects of pressure) 75.50.-y (Studies of specific magnetic materials)

彭毅, 于爽, 赵国强, 李文敏, 赵建发, 曹立朋, 望贤成, 刘清青, 张思佳, 于润泽, 邓正, 朱小红, 靳常青. Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂[J]. 中国物理B, 2019, 28(5): 57501-057501.

Y Peng(彭毅), S Yu(于爽), G Q Zhao(赵国强), W M Li(李文敏), J F Zhao(赵建发), L P Cao(曹立朋), X C Wang(望贤成), Q Q Liu(刘清青), S J Zhang(张思佳), R Z Yu(于润泽), Z Deng(邓正), X H Zhu(朱小红), C Q Jin(靳常青). Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂[J]. Chin. Phys. B, 2019, 28(5): 57501-057501.

参考文献 30

[1]	Zutic I, Fabian J and Das Sarma S 2004 Rev. Mod. Phys. 76 323 doi: 10.1103/RevModPhys.76.323
[2]	Jungwirth T, Wunderlich J, Novák V, Olejník K, Gallagher B L, Campion R P, Edmonds K W, Rushforth A W, Ferguson A J and Němec P 2014 Rev. Mod. Phys. 86 855 doi: 10.1103/RevModPhys.86.855
[3]	Erwin S C and Žutić I 2004 Nat. Mater. 3 410 doi: 10.1038/nmat1127
[4]	Ohno H 1998 Science 281 951 doi: 10.1126/science.281.5379.951
[5]	Chen L, Yang X, Yang F, Zhao J, Misuraca J, Xiong P and von Molnar S 2011 Nano Lett. 11 2584 doi: 10.1021/nl201187m
[6]	Ohno H, Chiba D, Matsukura F, Omiya T, Abe E, Dietl T, Ohno Y and Ohtani K 2000 Nature 408 944 doi: 10.1038/35050040
[7]	Deng Z, Jin C Q, Liu Q Q, et al. 2011 Nat. Commun. 2 422 doi: 10.1038/ncomms1425
[8]	Zhao K, Deng Z, Wang X C, et al. 2013 Nat. Commun. 4 1442 doi: 10.1038/ncomms2447
[9]	Zhao K, Chen B J, Zhao G Q, Yuan Z, Liu Q Q, Deng Z, Zhu J L and Jin C Q 2014 Chin. Science Bulletin 59 2524 doi: 10.1007/s11434-014-0398-z
[10]	Glasbrenner J K, Žutić I and Mazin I I 2014 Phys. Rev. B 90 140403 doi: 10.1103/PhysRevB.90.140403
[11]	Sun F, Li N N, Chen B J, Jia Y T, Zhang L J, Li W M, Zhao G Q, Xing L Y, Fabbris G, Wang Y G, Deng Z, Uemura Y J, Mao H K, Haskel D, Yang W G and Jin C Q 2016 Phys. Rev. B 93 224403 doi: 10.1103/PhysRevB.93.224403
[12]	Sun F, Zhao G Q, Escanhoela Jr C A, Chen B J, Kou R H, Wang Y G, Xiao, Y M Chow P, Mao H K, Haskel D, Yang W G and Jin C Q 2017 Phys. Rev. B 95 094412 doi: 10.1103/PhysRevB.95.094412
[13]	Zhao G Q, Li Z, Sun F, Yuan Z, Chen B J, Yu S, Peng Y, Deng Z, Wang X C and Jin C Q 2018 J. Phys.: Condens. Matter 30 254001 doi: 10.1088/1361-648X/aac367
[14]	Sun F, Xu C, Yu S, Chen B J, Zhao G Q, Deng Z, Wang Y G and Jin C Q 2017 Chin. Phys. Lett. 34 067501 doi: 10.1088/0256-307X/34/6/067501
[15]	Zhao G Q, Lin C J, Deng Z, Gu G X, Yu S, Wang X C, Gong Z Z, Uemera Y J and Li Y Q, Jin C Q 2017 Sci. Reports 7 14473
[16]	Wang R, Huang Z X, Zhao G Q, Yu S, Deng Z, Jin C Q, Jia Q J, Chen Y, Yang T Y, Jiang X M and Cao L X 2017 AIP Adv. 7 045017 doi: 10.1063/1.4982713
[17]	Suzuki H, Zhao G Q, Zhao K, Chen B J, Horio M, Koshiishi K, Xu J, Kobayashi M, Minohara M, Sakai E, Horiba K, Kumigashira H, Gu B, Maekawa S, Uemura Y J, Jin C Q and Fujimori A 2015 Phys. Rev. B 92 235120 doi: 10.1103/PhysRevB.92.235120
[18]	Frandsen B A, Gong Z, Terban M W, Banerjee S, Chen B J, Jin C Q, Feygenson M, Uemura Y J and Billinge S J L 2016 Phys. Rev. B 94 094102 doi: 10.1103/PhysRevB.94.094102
[19]	Surmach M A, Chen B J, Deng Z, Jin C Q, Glasbrenner J K, Mazin I I, Ivanov A and Inosov D S 2018 Phys. Rev. B 97 104418 doi: 10.1103/PhysRevB.97.104418
[20]	Gu G, Zhao G, Lin C, Li Y Q, Jin C Q and Xiang G 2018 Appl. Phys. Lett. 112 032402 doi: 10.1063/1.5010988
[21]	Deng Z, Zhao K, Gu B, Han W, Zhu J L, Wang X C, Li X, Liu Q Q, Yu R C, Goko T, Frandsen B, Liu L, Zhang J S, Wang Y Y, Ning F L, Maekawa S, Uemura Y J and Jin C Q 2013 Phys. Rev. B 88 081203 doi: 10.1103/PhysRevB.88.081203
[22]	Chen B J, Zhao K, Deng Z, Han W, Zhu J L, Wang X C, Liu Q Q, Frandsen B, Liu L, Cheung S, Ning F L, Munsie T J S, Medina T, Luke G M, Carlo J P, Munevar J, Uemura Y J and Jin C Q 2014 Phys. Rev. B 90 155202 doi: 10.1103/PhysRevB.90.155202
[23]	Zhao K, Chen B J, Deng Z, et al. 2014 J. Appl. Phys. 116 163906 doi: 10.1063/1.4899190
[24]	Han W, Zhao K, Wang X C, Liu Q Q, Ning F L, Deng Z, Liu L, Zhu J L, Ding C, Man H Y and Jin C Q 2013 Sci. Chin. Phys. Mech. Astron. 56 2026 doi: 10.1007/s11433-013-5320-1
[25]	Man H, Guo S, Sui Y, Guo Y, Chen B, Wang H, Ding C and Ning F L 2015 Sci. Rep. 5 15507 doi: 10.1038/srep15507
[26]	Ding C, Man H, Qin C, et al. 2013 Phys. Rev. B 88 041102 doi: 10.1103/PhysRevB.88.041102
[27]	Chen B J, Deng Z, Wang X C, Feng S M, Yuan Z, Zhang S J, Liu Q Q and Jin C Q 2016 Chin. Phys. B 25 077503 doi: 10.1088/1674-1056/25/7/077503
[28]	Suzuki H, Zhao K, Shibata G, Takahashi Y, Sakamoto S, Yoshimatsu K, Chen B J, Kumigashira H, Chang F H, Lin H J, Huang D J, Chen C T, Gu B, Maekawa S, Uemura Y J, Jin C Q and Fujimori A 2015 Phys. Rev. B 91 140401(R)
[29]	Hirohata A, Sukegawa H, Yanagihara H, Zutic I, Seki T, Mizukami S and Swaminathan R 2015 IEEE Trans. Magn. 51 0800511
[30]	Zutic I and Zhou T 2018 Sci. Chin.-Phys. Mech. & Astron. 61 067031 doi: Chin.-Phys. Mech.

Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂

Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂

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