中国物理B ›› 2020, Vol. 29 ›› Issue (5): 57504-057504.doi: 10.1088/1674-1056/ab8219

所属专题: Virtual Special Topic — Magnetism and Magnetic Materials

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Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims

Huanming Wang(王焕明), Sen Sun(孙森), Jiayin Xu(徐家胤), Xiaowei Lv(吕晓伟), Yuan Wang(汪渊), Yong Peng(彭勇), Xi Zhang(张析), Gang Xiang(向钢)   

  1. 1 College of Physics, Sichuan University, Chengdu 610064, China;
    2 Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;
    3 Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 73000, China
  • 收稿日期:2020-02-14 修回日期:2020-03-12 出版日期:2020-05-05 发布日期:2020-05-05
  • 通讯作者: Yuan Wang, Gang Xiang E-mail:wyuan@scu.edu.cn;gxiang@scu.edu.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFB0405702) and the National Natural Science Foundation of China (Grant No. 51671137).

Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims

Huanming Wang(王焕明)1, Sen Sun(孙森)2, Jiayin Xu(徐家胤)1, Xiaowei Lv(吕晓伟)3, Yuan Wang(汪渊)2, Yong Peng(彭勇)3, Xi Zhang(张析)1, Gang Xiang(向钢)1   

  1. 1 College of Physics, Sichuan University, Chengdu 610064, China;
    2 Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;
    3 Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 73000, China
  • Received:2020-02-14 Revised:2020-03-12 Online:2020-05-05 Published:2020-05-05
  • Contact: Yuan Wang, Gang Xiang E-mail:wyuan@scu.edu.cn;gxiang@scu.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFB0405702) and the National Natural Science Foundation of China (Grant No. 51671137).

摘要: Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by post-growth thermal annealing. Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films. Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature . The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals. The results may be useful for room temperature spintronic applications based on group IV semiconductors.

关键词: Mn-doped SiGe, diluted magnetic semiconductor, nanoclusters, ferromagnetism

Abstract: Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by post-growth thermal annealing. Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films. Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature . The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals. The results may be useful for room temperature spintronic applications based on group IV semiconductors.

Key words: Mn-doped SiGe, diluted magnetic semiconductor, nanoclusters, ferromagnetism

中图分类号:  (Magnetic semiconductors)

  • 75.50.Pp
78.40.Fy (Semiconductors) 75.75.-c (Magnetic properties of nanostructures)