Multiferroic ZnO obtained by substituting oxygen with nitrogen

doi:10.1088/1674-1056/20/8/087505

中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87505-087505.doi: 10.1088/1674-1056/20/8/087505

Multiferroic ZnO obtained by substituting oxygen with nitrogen

温峥¹, 吴迪¹, 高锦龙², 唐少龙², 徐庆宇³, 邱腾³, 徐明祥³

(1)Department of Materials Science and Engineering, Nanjing University, Nanjing 210008, China; (2)Department of Physics, Nanjing University, Nanjing 210008, China; (3)Department of Physics, Southeast University, Nanjing 211189, China

收稿日期:2011-02-10 修回日期:2011-03-15 出版日期:2011-08-15 发布日期:2011-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 50802041 and 50872050), the National Key Basic Research Program of China (Grant Nos. 2009CB929503 and 2010CB923404), NCET-09-0296 and Southeast University, and partially supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010421).

Multiferroic ZnO obtained by substituting oxygen with nitrogen

Xu Qing-Yu(徐庆宇)^a)^†,Wen Zheng(温峥)^b), Gao Jin-Long(高锦龙)^c),Wu Di(吴迪)^b), Qiu Teng(邱腾)^a),Tang Shao-Long(唐少龙)^c),and Xu Ming-Xiang(徐明祥)^a)

^a Department of Physics, Southeast University, Nanjing 211189, China; ^b Department of Materials Science and Engineering, Nanjing University, Nanjing 210008, China; ^c Department of Physics, Nanjing University, Nanjing 210008, China

Received:2011-02-10 Revised:2011-03-15 Online:2011-08-15 Published:2011-08-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 50802041 and 50872050), the National Key Basic Research Program of China (Grant Nos. 2009CB929503 and 2010CB923404), NCET-09-0296 and Southeast University, and partially supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010421).

摘要/Abstract

摘要： N-doped ZnO films were prepared in nitrogen plasma by pulsed laser deposition. Clear room temperature ferromagnetism has been observed in the film prepared at a substrate temperature of 500 °C. The structural characterizations of X-ray diffraction, Raman, and X-ray photoelectron spectroscopy confirm the substitution of O by N in ZnO, which has been considered to be the origin of the observed ferromagnetism. Furthermore, ferroelectricity has been observed at room temperature by piezoelectric force microscopy, indicating the potential multiferroic applications.

关键词: multiferroics, diluted magnetic semiconductor, ZnO

Abstract: N-doped ZnO films were prepared in nitrogen plasma by pulsed laser deposition. Clear room temperature ferromagnetism has been observed in the film prepared at a substrate temperature of 500 °C. The structural characterizations of X-ray diffraction, Raman, and X-ray photoelectron spectroscopy confirm the substitution of O by N in ZnO, which has been considered to be the origin of the observed ferromagnetism. Furthermore, ferroelectricity has been observed at room temperature by piezoelectric force microscopy, indicating the potential multiferroic applications.

Key words: multiferroics, diluted magnetic semiconductor, ZnO

中图分类号: (Magnetoelectric effects, multiferroics)

75.85.+t

75.50.Pp (Magnetic semiconductors) 77.55.hf (ZnO)

徐庆宇, 温峥, 高锦龙, 吴迪, 邱腾, 唐少龙, 徐明祥. Multiferroic ZnO obtained by substituting oxygen with nitrogen[J]. 中国物理B, 2011, 20(8): 87505-087505.

Xu Qing-Yu(徐庆宇), Wen Zheng(温峥), Gao Jin-Long(高锦龙), Wu Di(吴迪), Qiu Teng(邱腾), Tang Shao-Long(唐少龙), and Xu Ming-Xiang(徐明祥) . Multiferroic ZnO obtained by substituting oxygen with nitrogen[J]. Chin. Phys. B, 2011, 20(8): 87505-087505.

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Multiferroic ZnO obtained by substituting oxygen with nitrogen

Multiferroic ZnO obtained by substituting oxygen with nitrogen

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