Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

doi:10.1088/1674-1056/25/7/077503

中国物理B ›› 2016, Vol. 25 ›› Issue (7): 77503-077503.doi: 10.1088/1674-1056/25/7/077503

• SPECIAL TOPIC—High pressure physics • 上一篇下一篇

Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

Bi-Juan Chen(陈碧娟), Zheng Deng(邓正), Xian-Cheng Wang(望贤成), Shao-Min Feng(冯少敏), Zhen Yuan(袁真), Si-Jia Zhang(张思佳), Qing-Qing Liu(刘清青), Chang-Qing Jin(靳常青)

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

收稿日期:2016-03-17 修回日期:2016-04-07 出版日期:2016-07-05 发布日期:2016-07-05
通讯作者: Xian-Cheng Wang, Chang-Qing Jin E-mail:Jin@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China.

Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

Bi-Juan Chen(陈碧娟)¹, Zheng Deng(邓正)¹, Xian-Cheng Wang(望贤成)¹, Shao-Min Feng(冯少敏)¹, Zhen Yuan(袁真)¹, Si-Jia Zhang(张思佳)¹, Qing-Qing Liu(刘清青)¹, Chang-Qing Jin(靳常青)^1,2

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

Received:2016-03-17 Revised:2016-04-07 Online:2016-07-05 Published:2016-07-05
Contact: Xian-Cheng Wang, Chang-Qing Jin E-mail:Jin@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China.

摘要/Abstract

摘要：

The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor.

关键词: diluted magnetic semiconductor, ZrCuSiAs-type structure, high pressure

Abstract:

Key words: diluted magnetic semiconductor, ZrCuSiAs-type structure, high pressure

中图分类号: (Magnetic semiconductors)

75.50.Pp

81.40.Vw (Pressure treatment) 74.62.Fj (Effects of pressure) 78.40.Fy (Semiconductors)

陈碧娟, 邓正, 望贤成, 冯少敏, 袁真, 张思佳, 刘清青, 靳常青. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors[J]. 中国物理B, 2016, 25(7): 77503-077503.

Bi-Juan Chen(陈碧娟), Zheng Deng(邓正), Xian-Cheng Wang(望贤成), Shao-Min Feng(冯少敏), Zhen Yuan(袁真), Si-Jia Zhang(张思佳), Qing-Qing Liu(刘清青), Chang-Qing Jin(靳常青). Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors[J]. Chin. Phys. B, 2016, 25(7): 77503-077503.

参考文献 43

[1]	Johnson V and Jeitschko W 1974 J. Solid State Chem. 11 161
[2]	Palazzi M, Carcaly C and Flahaut J 1980 J. Solid State Chem. 35 150
[3]	Palazzi M and Jaulmes S 1981 Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry 37 1337
[4]	Nientiedt A T, Jeitschko W, Pollmeier P G and Brylak M 1997 Zeitschrift für Naturforschung B 52 560
[5]	Poettgen R and Johrendt D 2008 Z. Naturforsch. 63b 1135
[6]	Kabbour H, Cario L and Boucher F 2005 J. Mater. Chem. 15 3525
[7]	Zhao L D, Berardan D, Pei Y L, Byl C, Pinsard-Gaudart L and Dragoe N 2010 Appl. Phys. Lett. 97 092118
[8]	Matsuishi S, Inoue Y, Nomura T, Hirano M and Hosono H 2008 J. Phys. Soc. Jpn. 77 113709
[9]	Wang X C, Liu Q Q, Lv Y X, Gao W B, Yang L X, Yu R C, Li F Y and Jin C Q 2008 Solid State Commun. 148 538
[10]	Li Y K, Xu X F, Cao C, Shen C Y, Luo Y K, Tao Q, Lin X, Zhang L, Cao G H and Xu Z A 2012 Phys. Rev. B 86 104408
[11]	Chen X H, Wu T, Wu G, Liu R H, Chen H and Fang D F 2008 Nature 453 761
[12]	Chen G F, Li Z, Wu D, Dong J, Li G, Hu W Z, Zheng P, Luo J L and Wang N L 2008 Phys. Rev. Lett. 100 247002
[13]	Kamihara Y, Watanabe T, Hirano M and Hosono H 2008 J. Am. Chem. Soc. 130 3296
[14]	Ren Z A, Yang J, Lu W, Yi W, Shen X L, Li Z C, Che G C, Dong X L, Sun L L, Zhou F and Zhao Z X 2008 Europhys. Lett. 82 57002
[15]	Ohno H 1998 Science 281 951
[16]	Dietl T 2010 Nat. Mater. 9 965
[17]	Deng Z, Jin C Q, Liu Q Q, Wang X C, Zhu J L, Feng S M, Chen L C, Yu R C, Arguello C, Goko T, Ning F L, Zhang J S, Wang Y Y, Aczel A A, Munsie T, Williams T J, Luke G M, Kakeshita T, Uchida S, Higemoto W, Ito T U, Gu B, Maekawa S, Morris G D and Uemura Y J 2011 Nat. Commun. 2 422
[18]	Deng Z, Zhao K, Gu B, Han W, Zhu J L, Wang X C, Li X, Liu Q Q, Yu R C, Goko T, Frandsen B, Liu L, Zhang J S, Wang Y Y, Ning F L, Maekawa S, Uemura Y J and Jin C Q 2013 Phys. Rev. B 88 081203(R)
[19]	Zhao K, Deng Z, Wang X C, Han W, Zhu J L, Li X, Liu Q Q, Yu R C, Goko T, Frandsen B, Liu L, Ning F L, Uemura Y J, Dabkowska H, Luke G M, Luetkens H, Morenzoni E, Dunsiger S R, Senyshyn A, Boni P and Jin C Q 2013 Nat. Commun. 4 1442
[20]	Zhao K, Chen B J, Zhao G Q, Yuan Z, Liu Q Q, Deng Z, Zhu J L and Jin C Q 2014 Chin. Sci. Bull. 59 2524
[21]	Chen B J, Zhao K, Deng Z, Han W, Zhu J L, Wang X C, Liu Q Q, Frandsen B, Liu L, Cheung S, Ning F L, Munsie T J S, Medina T, Luke G M, Carlo J P, Munevar J, Uemura Y J and Jin C Q 2014 Phys. Rev. B 90 155202
[22]	Zhao K, Chen B J, Deng Z, Han W, Zhao G Q, Zhu J L, Liu Q Q, Wang X C, Frandsen B, Liu L, Cheung S, Ning F L, Munsie T J S, Medina T, Luke G M, Carlo J P, Munevar J, Zhang G M, Uemura Y J and Jin C Q 2014 J. Appl. Phys. 116 163906
[23]	Ding C, Man H Y, Qin C, Lu J C, Sun Y Y, Wang Q, Yu B Q, Feng C M, Goko T, Arguello C J, Liu L, Frandsen B J, Uemura Y J, Wang H D, Luetkens H, Morenzoni E, Han W, Jin C Q, Munsie T, Williams T J, D'Ortenzio R M, Medina T, Luke G M, Imai T and Ning F L 2013 Phys. Rev. B 88 041102
[24]	Yang X J, Li Y K, Shen C Y, Si B Q, Sun Y L, Tao Q, Cao G H, Xu Z and Zhang F C 2013 Appl. Phys. Lett. 103 022410
[25]	Han W, Zhao K, Wang X C, Liu Q Q, Ning F L, Deng Z, Liu Y, Zhu J L, Ding C and Man H Y 2013 Sci. China Phys. Mechanics and Astronomy 56 2026
[26]	Larson A C and Von Dreele R B 1994 General Structure Analysis System. Los Alamos National Laboratory Report: LAUR 86-748
[27]	Takano Y, Komatsuzaki S, Komasaki H, Watanabe T, Takahashi Y and Takase K 2008 J. Alloy. Compd. 451 467
[28]	Nientiedt A T and Jeitschko W 1998 Inorg. Chem. 37 386
[29]	Palazzi P and Acad C R 1981 Sc. Ser. II 292 789
[30]	Koyano S, Takase K, Kuroiwa Y, Aoyagi S, Shoji O, Sato K, Takahashi Y and Takano Y Sekizawa K 2006 J. Alloy. Compd. 95 408
[31]	Schellenberg I, Nilges T and Pöttgen R 2008 Z. Naturforsch. 63b 834
[32]	Wollesen P, Kaiser J W and Jeitschko W 1997 Z. Naturforsch. 52b 1467
[33]	Charkin D O, Urmanov A V, Plokhikh I V, Korshunov A D, Kuznetsov A N and Kazakov S M 2014 J. Alloy. Comp. 585 644
[34]	Han F, Zhu X Y, Mu G, Cheng P and Wen H H 2008 Phys. Rev. B 78 180503(R)
[35]	Zhao J G, Wang L H, Dong D W, Liu Z G, Liu H Z, Chen G F, Wu D, Luo J L, Wang N L, Yu Y, Jin C Q and Guo Q Z 2008 J. Am. Chem. Soc. 130 13828
[36]	Mito M, Pitcher M J, Crichton W, Garbarino G, Baker P J, Blundell S J, Adamson P, Parker D R and Clarke S J 2009 J. Am. Chem. Soc. 131 2986
[37]	Liu Q Q, Yu X H, Wang X C, Deng Z, Lv Y X, Zhu J L, Zhang S J, Liu H Z, Yang W G, Wang L, Mao H, Shen G Y, Lu Z Y, Ren Y, Chen Z Q, Lin Z J, Zhao Y S and Jin C Q 2011 J. Am. Chem. Soc. 133 7892
[38]	Hadjiev V, Iliev M, Sasmal K, Sun Y Y and Chu C 2008 Phys. Rev. B 77 220505(R)
[39]	Zhang L, Fujita T, Chen F L, Feng D, Maekawa S and Chen M W 2009 Phys. Rev. B 79 052507
[40]	Kuroki K, Onari S, Arita R, Usui H, Tanaka Y, Kontani H and Aoki H 2008 Phys. Rev. Lett. 101 081007
[41]	Mazin I I, Singh D J, Johannes M D and Du M H 2008 Phys. Rev. Lett. 101 057003
[42]	Xiao Z, Hiramatsu H, Ueda S, Toda Y, Ran F Y, Guo J, Lei H, Matsuishi S, Hosono H and Kamiya T 2014 J. Am. Chem. Soc. 136 14959
[43]	McElroy C A, Hamlin J J, White B D, McGuire M A, Sales B C and Maple M B 2013 Phys. Rev. B 88 134513

Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

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