Multi-carrier transport in ZrTe5 film

doi:10.1088/1674-1056/27/8/087307

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 87307-087307.doi: 10.1088/1674-1056/27/8/087307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Multi-carrier transport in ZrTe₅ film

Fangdong Tang(汤方栋), Peipei Wang(王培培), Peng Wang(王鹏), Yuan Gan(甘远), Le Wang(王乐), Wei Zhang(张威), Liyuan Zhang(张立源)

1 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natual Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
2 Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

收稿日期:2018-04-10 修回日期:2018-06-01 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Le Wang E-mail:le.wang@ruc.edu.cn
基金资助:
Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).

Multi-carrier transport in ZrTe₅ film

Fangdong Tang(汤方栋)^1,2, Peipei Wang(王培培)², Peng Wang(王鹏)², Yuan Gan(甘远)², Le Wang(王乐)¹, Wei Zhang(张威)¹, Liyuan Zhang(张立源)²

1 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natual Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
2 Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

Received:2018-04-10 Revised:2018-06-01 Online:2018-08-05 Published:2018-08-05
Contact: Le Wang E-mail:le.wang@ruc.edu.cn
Supported by:
Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).

摘要/Abstract

摘要：

Single-layered zirconium pentatelluride (ZrTe₅) has been predicted to be a large-gap two-dimensional (2D) topological insulator, which has attracted particular attention in topological phase transitions and potential device applications. Herein, we investigated the transport properties in ZrTe₅ films as a function of thickness, ranging from a few nm to several hundred nm. We determined that the temperature of the resistivity anomaly peak (T_p) tends to increase as the thickness decreases. Moreover, at a critical thickness of~40 nm, the dominating carriers in the films change from n-type to p-type. A comprehensive investigation of Shubnikov-de Hass (SdH) oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films. We determined the carrier densities and mobilities of two majority carriers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry phase π, while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate the ZrTe₅ film in an inert or vacuum environment to potentially achieve a substantial improvement in device quality.

关键词: multi-carrier transport, ZrTe₅ film, thickness-dependence, gate-dependence

Abstract:

Key words: multi-carrier transport, ZrTe₅ film, thickness-dependence, gate-dependence

中图分类号: (Electronic transport phenomena in thin films)

73.50.-h

73.23.-b (Electronic transport in mesoscopic systems) 73.63.-b (Electronic transport in nanoscale materials and structures)

汤方栋, 王培培, 王鹏, 甘远, 王乐, 张威, 张立源. Multi-carrier transport in ZrTe₅ film[J]. 中国物理B, 2018, 27(8): 87307-087307.

Fangdong Tang(汤方栋), Peipei Wang(王培培), Peng Wang(王鹏), Yuan Gan(甘远), Le Wang(王乐), Wei Zhang(张威), Liyuan Zhang(张立源). Multi-carrier transport in ZrTe₅ film[J]. Chin. Phys. B, 2018, 27(8): 87307-087307.

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Multi-carrier transport in ZrTe₅ film

Multi-carrier transport in ZrTe₅ film

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