中国物理B ›› 2021, Vol. 30 ›› Issue (9): 97804-097804.doi: 10.1088/1674-1056/ac0791

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Origin of anomalous enhancement of the absorption coefficient in a PN junction

Xiansheng Tang(唐先胜)1,2,3,4, Baoan Sun(孙保安)1,3,5, Chen Yue(岳琛)1,2,3,4, Xinxin Li(李欣欣)1,2,3,4, Junyang Zhang(张珺玚)1,2,3,4, Zhen Deng(邓震)1,2,4, Chunhua Du(杜春花)1,2,4, Wenxin Wang(王文新)1,2,4,5, Haiqiang Jia(贾海强)1,2,4,5, Yang Jiang(江洋)1,2,4,†, Weihua Wang(汪卫华)1,3,5, and Hong Chen(陈弘)1,2,3,4,5,‡   

  1. 1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China;
    4 Center of Material and Optoelectronics Engineering, University of Academy of Sciences, Beijing 100049, China;
    5 Songshan Lake Material Laboratory, Dongguan 523808, China
  • 收稿日期:2021-04-19 修回日期:2021-05-13 接受日期:2021-06-03 出版日期:2021-08-19 发布日期:2021-08-19
  • 通讯作者: Yang Jiang, Hong Chen E-mail:jiangyang@iphy.ac.cn;hchen@iphy.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61804176, 61991441, and 62004218), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB01000000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences.

Origin of anomalous enhancement of the absorption coefficient in a PN junction

Xiansheng Tang(唐先胜)1,2,3,4, Baoan Sun(孙保安)1,3,5, Chen Yue(岳琛)1,2,3,4, Xinxin Li(李欣欣)1,2,3,4, Junyang Zhang(张珺玚)1,2,3,4, Zhen Deng(邓震)1,2,4, Chunhua Du(杜春花)1,2,4, Wenxin Wang(王文新)1,2,4,5, Haiqiang Jia(贾海强)1,2,4,5, Yang Jiang(江洋)1,2,4,†, Weihua Wang(汪卫华)1,3,5, and Hong Chen(陈弘)1,2,3,4,5,‡   

  1. 1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China;
    4 Center of Material and Optoelectronics Engineering, University of Academy of Sciences, Beijing 100049, China;
    5 Songshan Lake Material Laboratory, Dongguan 523808, China
  • Received:2021-04-19 Revised:2021-05-13 Accepted:2021-06-03 Online:2021-08-19 Published:2021-08-19
  • Contact: Yang Jiang, Hong Chen E-mail:jiangyang@iphy.ac.cn;hchen@iphy.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61804176, 61991441, and 62004218), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB01000000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences.

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摘要： The absorption coefficient is usually considered as a constant for certain materials at the given wavelength. However, recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction. The absorption coefficient varies with the thickness of the intrinsic layer in a PIN structure. Here, we interpret the anomalous absorption coefficient from the competition between recombination and drift for non-equilibrium carriers. Based on the Fokker-Planck theory, a non-equilibrium statistical model that describes the relationship between absorption coefficient and material thickness has been proposed. It could predict the experimental data well. Our results can give new ideas to design photoelectric devices.

关键词: PN junction, absorption coefficient, non-equilibrium statistical model

Abstract: The absorption coefficient is usually considered as a constant for certain materials at the given wavelength. However, recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction. The absorption coefficient varies with the thickness of the intrinsic layer in a PIN structure. Here, we interpret the anomalous absorption coefficient from the competition between recombination and drift for non-equilibrium carriers. Based on the Fokker-Planck theory, a non-equilibrium statistical model that describes the relationship between absorption coefficient and material thickness has been proposed. It could predict the experimental data well. Our results can give new ideas to design photoelectric devices.

Key words: PN junction, absorption coefficient, non-equilibrium statistical model

中图分类号:  (Optical properties of specific thin films)

  • 78.66.-w
42.70.-a (Optical materials) 73.50.-h (Electronic transport phenomena in thin films)