中国物理B ›› 2018, Vol. 27 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/27/2/028501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选)   

  1. 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-08-31 修回日期:2017-11-08 出版日期:2018-02-05 发布日期:2018-02-05
  • 通讯作者: Meng-Ying Zhang E-mail:myzhang@mail.sim.ac.cn
  • 基金资助:
    Project supported by the Weapon Equipment Pre-Research Foundation of China (Grant No. 9140A11020114ZK34147) and the Shanghai Municipal Natural Science Foundation, China (Grant No. 15ZR1447100).

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Meng-Ying Zhang(张梦映)1,2, Zhi-Yuan Hu(胡志远)1, Da-Wei Bi(毕大炜)1, Li-Hua Dai(戴丽华)1,2, Zheng-Xuan Zhang(张正选)1   

  1. 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-08-31 Revised:2017-11-08 Online:2018-02-05 Published:2018-02-05
  • Contact: Meng-Ying Zhang E-mail:myzhang@mail.sim.ac.cn
  • About author:85.30.-z; 61.80.-x; 07.87.+v; 85.30.De
  • Supported by:
    Project supported by the Weapon Equipment Pre-Research Foundation of China (Grant No. 9140A11020114ZK34147) and the Shanghai Municipal Natural Science Foundation, China (Grant No. 15ZR1447100).

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摘要： Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator (PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect (RINCE). The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

关键词: partiallydepleted silicon-on-insulator (PD SOI), totalionizingdose (TID), radiationinduced narrow channel effect (RINCE), drain induced barrier lowering (DIBL) effect

Abstract: Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator (PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect (RINCE). The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

Key words: partiallydepleted silicon-on-insulator (PD SOI), totalionizingdose (TID), radiationinduced narrow channel effect (RINCE), drain induced barrier lowering (DIBL) effect

中图分类号:  (Semiconductor devices)

  • 85.30.-z
61.80.-x (Physical radiation effects, radiation damage) 07.87.+v (Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.)) 85.30.De (Semiconductor-device characterization, design, and modeling)