中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88504-088504.doi: 10.1088/1674-1056/26/8/088504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode

Bin Ren(任彬), Hui Guo(郭晖), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Hui Liu(刘晖), Jian Liu(刘健), Zhi-Hui Shen(申志辉), Yan-Li Shi(史衍丽), Pei Liu(刘培)   

  1. 1 Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China;
    2 Department of Physics, Beijing Institute of Technology, Beijing 100081, China;
    3 Kunming Institute of Physics, Kunming 650223, China;
    4 Institute of Electron Engineering and Photoelectric Technology, Nanjing University of Science and Technology, Nanjing 210094, China;
    5 Chongqing Optoelectronics Research Institute, Chongqing 400060, China;
    6 Newcastle University Business School, Newcastle, The UK
  • 收稿日期:2017-02-10 修回日期:2017-04-14 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Bin Ren E-mail:robinson_cv@163.com
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 10974015) and the National Defense Pre-Research Foundation of China (Grant No. 9140C380502150C38002).

A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode

Bin Ren(任彬)1,2,3, Hui Guo(郭晖)1,3, Feng Shi(石峰)1,3, Hong-Chang Cheng(程宏昌)1,3, Hui Liu(刘晖)1,3, Jian Liu(刘健)4, Zhi-Hui Shen(申志辉)5, Yan-Li Shi(史衍丽)3, Pei Liu(刘培)6   

  1. 1 Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China;
    2 Department of Physics, Beijing Institute of Technology, Beijing 100081, China;
    3 Kunming Institute of Physics, Kunming 650223, China;
    4 Institute of Electron Engineering and Photoelectric Technology, Nanjing University of Science and Technology, Nanjing 210094, China;
    5 Chongqing Optoelectronics Research Institute, Chongqing 400060, China;
    6 Newcastle University Business School, Newcastle, The UK
  • Received:2017-02-10 Revised:2017-04-14 Online:2017-08-05 Published:2017-08-05
  • Contact: Bin Ren E-mail:robinson_cv@163.com
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 10974015) and the National Defense Pre-Research Foundation of China (Grant No. 9140C380502150C38002).

摘要:

We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1-xN photocathode (x ~ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1-xN: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.

关键词: photocathode, III-nitride, solar-blind UV

Abstract:

We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1-xN photocathode (x ~ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1-xN: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.

Key words: photocathode, III-nitride, solar-blind UV

中图分类号:  (Photomultipliers; phototubes and photocathodes)

  • 85.60.Ha
73.61.Ey (III-V semiconductors) 79.60.-i (Photoemission and photoelectron spectra)