中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/26/8/088503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Pei Li(李培), Mo-Han Liu(刘默寒), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Jin-Xin Zhang(张晋新), Ting Ma(马婷)
Pei Li(李培)1, Mo-Han Liu(刘默寒)3, Chao-Hui He(贺朝会)1, Hong-Xia Guo(郭红霞)2, Jin-Xin Zhang(张晋新)1, Ting Ma(马婷)1
摘要:
Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO2 interface and the isolation structure could be contributing to the different ionizing radiation damage.
中图分类号: (Bipolar transistors)