中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/26/8/088503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

An investigation of ionizing radiation damage in different SiGe processes

Pei Li(李培), Mo-Han Liu(刘默寒), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Jin-Xin Zhang(张晋新), Ting Ma(马婷)   

  1. 1 School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
    2 Northwest Institution of Nuclear Technology, Xi'an 710024, China;
    3 Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • 收稿日期:2017-02-28 修回日期:2017-04-27 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Chao-Hui He E-mail:hechaohui@mail.xjtu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274106 and 61574171).

An investigation of ionizing radiation damage in different SiGe processes

Pei Li(李培)1, Mo-Han Liu(刘默寒)3, Chao-Hui He(贺朝会)1, Hong-Xia Guo(郭红霞)2, Jin-Xin Zhang(张晋新)1, Ting Ma(马婷)1   

  1. 1 School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
    2 Northwest Institution of Nuclear Technology, Xi'an 710024, China;
    3 Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • Received:2017-02-28 Revised:2017-04-27 Online:2017-08-05 Published:2017-08-05
  • Contact: Chao-Hui He E-mail:hechaohui@mail.xjtu.edu.cn
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274106 and 61574171).

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摘要：

Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO2 interface and the isolation structure could be contributing to the different ionizing radiation damage.

关键词: different silicon-germanium process, ionizing radiation damage, numerical simulation

Abstract:

Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO2 interface and the isolation structure could be contributing to the different ionizing radiation damage.

Key words: different silicon-germanium process, ionizing radiation damage, numerical simulation

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
61.80.Az (Theory and models of radiation effects) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 61.80.-x (Physical radiation effects, radiation damage)