Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

doi:10.1088/1674-1056/26/3/037106

中国物理B ›› 2017, Vol. 26 ›› Issue (3): 37106-037106.doi: 10.1088/1674-1056/26/3/037106

所属专题： TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇下一篇

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

Jianlu Wang(王建禄), Weida Hu(胡伟达)

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

收稿日期:2016-10-07 修回日期:2016-11-24 出版日期:2017-03-05 发布日期:2017-03-05
通讯作者: Jianlu Wang, Weida Hu E-mail:jlwang@mail.sitp.ac.cn;wdhu@mail.sitp.ac.cn
基金资助:
Project supported by the Major State Basic Research Development Program of China (Grant Nos. 2013CB922302 and 2016YFA0203900), the Natural Science Foundation of China (Grant Nos. 11322441, 614404147, 61574152, and 61674157), and the Key Research Project of Frontier Science of Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-JSC016 and QYZDB-SSW-JSC031).

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

Jianlu Wang(王建禄), Weida Hu(胡伟达)

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Received:2016-10-07 Revised:2016-11-24 Online:2017-03-05 Published:2017-03-05
Contact: Jianlu Wang, Weida Hu E-mail:jlwang@mail.sitp.ac.cn;wdhu@mail.sitp.ac.cn
Supported by:
Project supported by the Major State Basic Research Development Program of China (Grant Nos. 2013CB922302 and 2016YFA0203900), the Natural Science Foundation of China (Grant Nos. 11322441, 614404147, 61574152, and 61674157), and the Key Research Project of Frontier Science of Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-JSC016 and QYZDB-SSW-JSC031).

摘要/Abstract

摘要：

Two-dimensional (2D) materials, such as graphene and MoS₂ related transition metal dichalcogenides (TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials, possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor (FET) structures with ferroelectric gate dielectric construction (termed FeFET). One type of device is for logic applications, such as a graphene and TMDC FeFET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material FeFET.

关键词: two-dimensional materials, ferroelectrics, FeFET, PVDF, photodetector

Abstract:

Key words: two-dimensional materials, ferroelectrics, FeFET, PVDF, photodetector

中图分类号: (Polymers and organic compounds)

71.20.Rv

72.80.Ga (Transition-metal compounds) 77.55.fp (Other ferroelectric films) 81.05.ue (Graphene)

王建禄, 胡伟达. Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors[J]. 中国物理B, 2017, 26(3): 37106-037106.

Jianlu Wang(王建禄), Weida Hu(胡伟达). Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors[J]. Chin. Phys. B, 2017, 26(3): 37106-037106.

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Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

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