Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

doi:10.1088/1674-1056/26/10/108801

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 108801-108801.doi: 10.1088/1674-1056/26/10/108801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

Hadi Bashiri, Mohammad Azim Karami, Shahramm Mohammadnejad

School of Electrical Engineering, Iran University of Science & Technology(IUST), Narmak, Tehran 16844, Iran

收稿日期:2017-04-27 修回日期:2017-06-13 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: Mohammad Azim Karami E-mail:karami@iust.ac.ir

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

Hadi Bashiri, Mohammad Azim Karami, Shahramm Mohammadnejad

School of Electrical Engineering, Iran University of Science & Technology(IUST), Narmak, Tehran 16844, Iran

Received:2017-04-27 Revised:2017-06-13 Online:2017-10-05 Published:2017-10-05
Contact: Mohammad Azim Karami E-mail:karami@iust.ac.ir

摘要/Abstract

摘要：

By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact (IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters (doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density.

关键词: IBC silicon solar cells, interface layer, recombination, interface defect density

Abstract:

Key words: IBC silicon solar cells, interface layer, recombination, interface defect density

中图分类号: (Modeling and analysis)

88.40.fc

88.40.hj (Efficiency and performance of solar cells) 88.40.jj (Silicon solar cells) 85.60.Bt (Optoelectronic device characterization, design, and modeling)

Hadi Bashiri,Mohammad Azim Karami,Shahramm Mohammadnejad. Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces[J]. 中国物理B, 2017, 26(10): 108801-108801.

Hadi Bashiri, Mohammad Azim Karami, Shahramm Mohammadnejad. Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces[J]. Chin. Phys. B, 2017, 26(10): 108801-108801.

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Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

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