Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

doi:10.1088/1674-1056/27/6/067204

中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67204-067204.doi: 10.1088/1674-1056/27/6/067204

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

Xiong He(何雄), Zhi-Gang Sun(孙志刚)

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

收稿日期:2017-11-10 修回日期:2018-02-02 出版日期:2018-06-05 发布日期:2018-06-05
通讯作者: Zhi-Gang Sun E-mail:sun_zg@whut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos.11574243 and 11174231).

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

Xiong He(何雄), Zhi-Gang Sun(孙志刚)

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

Received:2017-11-10 Revised:2018-02-02 Online:2018-06-05 Published:2018-06-05
Contact: Zhi-Gang Sun E-mail:sun_zg@whut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos.11574243 and 11174231).

摘要/Abstract

摘要： It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI-GaAs/Ag device. The device is subjected to the irradiation of light which is supplied by light-emitting diode (LED) lamp beads with a wavelength in a range of about 395 nm-405 nm and the working power of each LED lamp bead is about 33 mW. The photoinduced MR shows no saturation under magnetic fields (B) up to 1 T and the MR sensitivity S (S=MR/B) at low magnetic field (B=0.001 T) can reach 15 T^-1. It is found that the recombination of photoinduced electron and hole results in a positive photoinduced MR effect. This work implies that a high photoinduced S under a low magnetic field may be obtained in a non-magnetic semiconductor device with a very low intrinsic carrier concentration.

关键词: GaAs, magnetoresistance, carrier recombination

Abstract: It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI-GaAs/Ag device. The device is subjected to the irradiation of light which is supplied by light-emitting diode (LED) lamp beads with a wavelength in a range of about 395 nm-405 nm and the working power of each LED lamp bead is about 33 mW. The photoinduced MR shows no saturation under magnetic fields (B) up to 1 T and the MR sensitivity S (S=MR/B) at low magnetic field (B=0.001 T) can reach 15 T^-1. It is found that the recombination of photoinduced electron and hole results in a positive photoinduced MR effect. This work implies that a high photoinduced S under a low magnetic field may be obtained in a non-magnetic semiconductor device with a very low intrinsic carrier concentration.

Key words: GaAs, magnetoresistance, carrier recombination

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

何雄, 孙志刚. Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device[J]. 中国物理B, 2018, 27(6): 67204-067204.

Xiong He(何雄), Zhi-Gang Sun(孙志刚). Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device[J]. Chin. Phys. B, 2018, 27(6): 67204-067204.

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Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

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