中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67206-067206.doi: 10.1088/1674-1056/25/6/067206
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
Ze-Zhao He(何泽召), Ke-Wu Yang(杨克武), Cui Yu(蔚翠), Qing-Bin Liu(刘庆彬), Jing-Jing Wang(王晶晶), Jia Li(李佳), Wei-Li Lu(芦伟立), Zhi-Hong Feng(冯志红), Shu-Jun Cai(蔡树军)
- 1 School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China;
2 National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
Ze-Zhao He(何泽召)1,2, Ke-Wu Yang(杨克武)1,2, Cui Yu(蔚翠)2, Qing-Bin Liu(刘庆彬)2, Jing-Jing Wang(王晶晶)2, Jia Li(李佳)2, Wei-Li Lu(芦伟立)2, Zhi-Hong Feng(冯志红)2, Shu-Jun Cai(蔡树军)2
- 1 School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China;
2 National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
摘要：
In this paper, high temperature direct current (DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃. At a gate voltage of -8 V (far from Dirac point), the drain-source current decreases obviously with increasing temperature, but it has little change at a gate bias of +8 V (near Dirac point). The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies. Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures. The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience, demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.
中图分类号: (Electronic transport in graphene)
- 72.80.Vp