Influences of different structures on the characteristics of H2O-based and O3-based LaxAlyO films deposited by atomic layer deposition

doi:10.1088/1674-1056/25/5/058106

中国物理B ›› 2016, Vol. 25 ›› Issue (5): 58106-058106.doi: 10.1088/1674-1056/25/5/058106

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition

Chen-Xi Fei(费晨曦), Hong-Xia Liu(刘红侠), Xing Wang(汪星), Dong-Dong Zhao(赵冬冬), Shu-Long Wang(王树龙), Shu-Peng Chen(陈树鹏)

Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2015-11-05 修回日期:2016-01-14 出版日期:2016-05-05 发布日期:2016-05-05
通讯作者: Hong-Xia Liu E-mail:hxliu@mail.xidian.edu.cn
基金资助:
Project supported supported by the National Natural Science Foundation of China (Grant Nos. 61376099 and 61434007).

Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition

Chen-Xi Fei(费晨曦), Hong-Xia Liu(刘红侠), Xing Wang(汪星), Dong-Dong Zhao(赵冬冬), Shu-Long Wang(王树龙), Shu-Peng Chen(陈树鹏)

Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2015-11-05 Revised:2016-01-14 Online:2016-05-05 Published:2016-05-05
Contact: Hong-Xia Liu E-mail:hxliu@mail.xidian.edu.cn
Supported by:
Project supported supported by the National Natural Science Foundation of China (Grant Nos. 61376099 and 61434007).

摘要/Abstract

摘要： H₂O-based and O₃-based La_xAl_yO nanolaminate films were deposited on Si substrates by atomic layer deposition (ALD). Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the La_xAl_yO films were studied. Chemical bonds in the La_xAl_yO films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy (XPS). The preliminary testing results indicate that the La_xAl_yO films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness (EOT), electrical properties, and stability.

关键词: atomic layer deposition, oxidant, dielectric constant, equivalent oxide thickness

Abstract: H₂O-based and O₃-based La_xAl_yO nanolaminate films were deposited on Si substrates by atomic layer deposition (ALD). Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the La_xAl_yO films were studied. Chemical bonds in the La_xAl_yO films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy (XPS). The preliminary testing results indicate that the La_xAl_yO films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness (EOT), electrical properties, and stability.

Key words: atomic layer deposition, oxidant, dielectric constant, equivalent oxide thickness

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

费晨曦, 刘红侠, 汪星, 赵冬冬, 王树龙, 陈树鹏. Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition[J]. 中国物理B, 2016, 25(5): 58106-058106.

Chen-Xi Fei(费晨曦), Hong-Xia Liu(刘红侠), Xing Wang(汪星), Dong-Dong Zhao(赵冬冬), Shu-Long Wang(王树龙), Shu-Peng Chen(陈树鹏). Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition[J]. Chin. Phys. B, 2016, 25(5): 58106-058106.

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Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition

Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition

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