Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

doi:10.1088/1674-1056/24/3/037304

中国物理B ›› 2015, Vol. 24 ›› Issue (3): 37304-037304.doi: 10.1088/1674-1056/24/3/037304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

张鹏, 赵胜雷, 侯斌, 王冲, 郑雪峰, 马晓华, 张进成, 郝跃

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

收稿日期:2014-06-19 修回日期:2014-09-16 出版日期:2015-03-05 发布日期:2015-03-05
基金资助:
Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334002) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61404100 and 61106106).

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Received:2014-06-19 Revised:2014-09-16 Online:2015-03-05 Published:2015-03-05
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334002) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61404100 and 61106106).

摘要/Abstract

摘要：

We present an AlGaN/GaN high-electron mobility transistor (HEMT) device with both field plate (FP) and low-density drain (LDD). The LDD is realized by the injection of negatively charged fluorine (F^-) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.

关键词: GaN, high-electron mobility transistors, fluorine, electric field

Abstract:

Key words: GaN, high-electron mobility transistors, fluorine, electric field

中图分类号: (III-V semiconductors)

73.61.Ey

85.30.Tv (Field effect devices) 52.77.Dq (Plasma-based ion implantation and deposition)

张鹏, 赵胜雷, 侯斌, 王冲, 郑雪峰, 马晓华, 张进成, 郝跃. Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors[J]. 中国物理B, 2015, 24(3): 37304-037304.

Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃). Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors[J]. Chin. Phys. B, 2015, 24(3): 37304-037304.

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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

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