Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

doi:10.1088/1674-1056/24/10/108504

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 108504-108504.doi: 10.1088/1674-1056/24/10/108504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

吴绍航^{a b}, 张楠^a, 胡永生^a, 陈红^c, 蒋大鹏^a, 刘星元^a

a State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Key Laboratory of Optical System Advanced Manufacturing Technology, Chinese Academy of Sciences, Changchun 130033, China

收稿日期:2015-03-08 修回日期:2015-04-20 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

Wu Shao-Hang (吴绍航)^{a b}, Zhang Nan (张楠)^a, Hu Yong-Sheng (胡永生)^a, Chen Hong (陈红)^c, Jiang Da-Peng (蒋大鹏)^a, Liu Xing-Yuan (刘星元)^a

a State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Key Laboratory of Optical System Advanced Manufacturing Technology, Chinese Academy of Sciences, Changchun 130033, China

Received:2015-03-08 Revised:2015-04-20 Online:2015-10-05 Published:2015-10-05
Contact: Liu Xing-Yuan E-mail:liuxy@ciomp.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.

摘要/Abstract

摘要： Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.

关键词: thin-film transistor, ZnO, electron beam evaporation

Abstract: Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.

Key words: thin-film transistor, ZnO, electron beam evaporation

中图分类号: (Field effect devices)

85.30.Tv

71.55.Gs (II-VI semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling)

吴绍航, 张楠, 胡永生, 陈红, 蒋大鹏, 刘星元. Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors[J]. 中国物理B, 2015, 24(10): 108504-108504.

Wu Shao-Hang (吴绍航), Zhang Nan (张楠), Hu Yong-Sheng (胡永生), Chen Hong (陈红), Jiang Da-Peng (蒋大鹏), Liu Xing-Yuan (刘星元). Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors[J]. Chin. Phys. B, 2015, 24(10): 108504-108504.

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Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

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