Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

doi:10.1088/1674-1056/23/2/027302

中国物理B ›› 2014, Vol. 23 ›› Issue (2): 27302-027302.doi: 10.1088/1674-1056/23/2/027302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

马晓华^{a b}, 吕敏^{a b}, 庞磊^c, 姜元祺^{a b}, 杨靖治^{a b}, 陈伟伟^{a b}, 刘新宇^c

a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2013-05-05 修回日期:2013-05-28 出版日期:2013-12-12 发布日期:2013-12-12
基金资助:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915).

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

Ma Xiao-Hua (马晓华)^{a b}, Lü Min (吕敏)^{a b}, Pang Lei (庞磊)^c, Jiang Yuan-Qi (姜元祺)^{a b}, Yang Jing-Zhi (杨靖治)^{a b}, Chen Wei-Wei (陈伟伟)^{a b}, Liu Xin-Yu (刘新宇)^c

a School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
c Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2013-05-05 Revised:2013-05-28 Online:2013-12-12 Published:2013-12-12
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
About author:73.61.Ey; 72.20.Jv; 79.20.Ap
Supported by:
Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915).

摘要/Abstract

摘要： The kink effect in current–voltage (IV) characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current (DC) IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage (V_ds) and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.

关键词: kink effect, deep levels, hot electrons, GaN-based HEMT

Abstract: The kink effect in current–voltage (IV) characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current (DC) IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage (V_ds) and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.

Key words: kink effect, deep levels, hot electrons, GaN-based HEMT

中图分类号: (III-V semiconductors)

73.61.Ey

72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 79.20.Ap (Theory of impact phenomena; numerical simulation)

马晓华, 吕敏, 庞磊, 姜元祺, 杨靖治, 陈伟伟, 刘新宇. Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier[J]. 中国物理B, 2014, 23(2): 27302-027302.

Ma Xiao-Hua (马晓华), Lü Min (吕敏), Pang Lei (庞磊), Jiang Yuan-Qi (姜元祺), Yang Jing-Zhi (杨靖治), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇). Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier[J]. Chin. Phys. B, 2014, 23(2): 27302-027302.

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Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

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