Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions

doi:10.1088/1674-1056/23/11/116102

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 116102-116102.doi: 10.1088/1674-1056/23/11/116102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions

时俪洋^a, 沈波^a, 闫建昌^b, 王军喜^b, 王平^a

a State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
b R&D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2014-04-11 修回日期:2014-05-27 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2012CB619300) and the National Natural Science Foundation of China (Grant Nos. 11174008 and 61361166007).

Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions

Shi Li-Yang (时俪洋)^a, Shen Bo (沈波)^a, Yan Jian-Chang (闫建昌)^b, Wang Jun-Xi (王军喜)^b, Wang Ping (王平)^a

a State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
b R&D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2014-04-11 Revised:2014-05-27 Online:2014-11-15 Published:2014-11-15
Contact: Shen Bo E-mail:bshen@pku.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2012CB619300) and the National Natural Science Foundation of China (Grant Nos. 11174008 and 61361166007).

摘要/Abstract

摘要：

By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al_xGa_1-xN epitaxial films with various Al compositions (x= 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al_xGa_1-xN films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al_xGa_1-xN films.

关键词: localized deep levels, current-voltage, capacitance-voltage, high-temperature deep-level transient spectroscopy techniques

Abstract:

Key words: localized deep levels, current-voltage, capacitance-voltage, high-temperature deep-level transient spectroscopy techniques

中图分类号: (Alloys )

61.66.Dk

61.72.-y (Defects and impurities in crystals; microstructure) 61.72.J- (Point defects and defect clusters) 61.72.jd (Vacancies)

时俪洋, 沈波, 闫建昌, 王军喜, 王平. Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions[J]. 中国物理B, 2014, 23(11): 116102-116102.

Shi Li-Yang (时俪洋), Shen Bo (沈波), Yan Jian-Chang (闫建昌), Wang Jun-Xi (王军喜), Wang Ping (王平). Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions[J]. Chin. Phys. B, 2014, 23(11): 116102-116102.

参考文献 40

[1]	Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[2]	Rumyantsev S L, Pala N, Shur M S, Gaska R, Levinshtein M E, Adivarahan V, Yang J, Simin G and Asif K M 2001 Appl. Phys. Lett. 79 866
[3]	Park Y S, Park C J, Park C M, Na J H, Oh J S, Yoon I T, Cho H Y, Kang T W and Oh J E 2005 Appl. Phys. Lett. 86 152109
[4]	Özdemir A F, Turut A and Kokce A 2003 Thin Solid Films 425 210
[5]	Nam K B, Nakarmi M L, Lin J Y and Jiang H X 2005 Appl. Phys. Lett. 86 222108
[6]	Nepal N, Nakarmi M L, Lin J Y and Jiang H X 2006 Appl. Phys. Lett. 89 092107
[7]	Sun Q, Wang H, Jiang D S, Jin R Q, Huang Y, Zhang S M, Yang H, Jahn U and Ploog K H 2006 J. Appl. Phys. 100 123101
[8]	Arehart A R, Allerman A A and Ringel S A 2011 J. Appl. Phys. 109 114506
[9]	Götz W, Johnson N M, Bremser M D and Davis R F 1996 Appl. Phys. Lett. 69 2379
[10]	Ooyama K, Sugawara K, Okuzaki S, Taketomi H, Miyake H, Hiramatsu K and Hashizume T 2010 Jpn. J. Appl. Phys. 49 101001
[11]	Qiao D, Yu L S, Lau S S, Redwing J M, Lin J Y and Jiang H X 2000 J. Appl. Phys. 87 801
[12]	Hashizume T, Kotani J and Hasegawa H 2004 Appl. Phys. Lett. 84 4884
[13]	Meneghini M, Bertin M, Stocco A, Santo G D, Marcon D, Malinowski P E, Chini A, Meneghesso G and Zanoni E 2013 Appl. Phys. Lett. 102 163501
[14]	Shi L Y, Shen B, Lu L W, Yan J C, Wang J X and Wang P 2014 Chin. Phys. B (In Press)
[15]	Hwang J, Schaff W J, Eastman L F, Bradley S T, Brillson L J, Look D C, Wu J, Walukiewicz W, Furis M and Cartwright A N 2002 Appl. Phys. Lett. 81 5192
[16]	Götz W, Johnson N M, Amano H and Akasaki I 1994 Appl. Phys. Lett. 65 463
[17]	Hacke P, Detchprohm T, Hiramatsu K, Sawaki N, Tadatomo K and Miyake K 1994 J. Appl. Phys. 76 304
[18]	Haase D, Schmid M, Kuürner W, Dörnen A, Härle V, Scholz F, Burkard M and Schweizer H 1996 Appl. Phys. Lett. 69 2525
[19]	Lee W I, Huang T C, Guo J D and Feng M S 1995 Appl. Phys. Lett. 67 1721
[20]	Cho H K, Kim K S, Hong C H and Lee H J 2001 J. Cryst. Growth 223 38
[21]	Fang Z Q, Hemsky J W, Look D C and Mack M P 1998 Appl. Phys. Lett. 72 448
[22]	Chen S, Honda U, Shibata T, Matsumura T, Tokuda Y, Ishikawa K, Hori M, Ueda H, Uesugi T and Kachi T 2012 J. Appl. Phys. 112 053513
[23]	Fang Z Q, Look D C, Jasinski J, Benamara M, Weber Z L and Molnar R J 2001 Appl. Phys. Lett. 78 332
[24]	Polyakov A Y, Smirnov N B, Govorkov N V and Redwing J M 1998 Solid-Sate Electron. 42 831
[25]	Muret P, Philippe A, Monroy E, Munoz E, Beaumont B, Omnes F and Gibart P 2001 Mater. Sci. Eng. B 82 91
[26]	Ito T, Yoshikawa M and Egawa T 2008 Phys. Stat. Solid C 5 2998
[27]	Fang Z Q, Look D C, Kim D H and Adesida I 2005 Appl. Phys. Lett. 87 182115
[28]	Götz W, Johnson N M, Bremser M D and Davis R F 1996 Appl. Phys. Lett. 69 2379
[29]	Osaka J, Ohno Y, Kishimoto S, Maezawa K and Hizutani T 2005 Appl. Phys. Lett. 87 222112
[30]	Uedono A, Ishibashi S, Keller S, Moe C, Cantu P, Katona T M, Kamber D S, Wu Y, Letts E, Newman S A, Nakamura S, Speck J S, Mishra U K, DenBaars S P, Onuma T and Chichibu S F 2009 J. Appl. Phys. 105 054501
[31]	Bruner D, Angerer H, Bustarret E, Freudenberg F, Dimitrov R, Amabacher O and Stutzmann M 1997 J. Appl. Phys. 82 5090
[32]	Nikishin S A, Faleev N N, Zubrilov A S, Antipov V G and Temkin H 2000 Appl. Phys. Lett. 76 3028
[33]	Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Willians S, Nikishin S A, Tretyakov V, and Temkin H 2001 J. Appl. Phys. 89 7977
[34]	Walukiewicz W, Li S X, Wu J, Yu K M, Ager Ⅲ J M, Haller E E, Lu H and Schaff W J 2004 J. Cryst. Gowth 269 119
[35]	Walukiewicz W 1987 J. Vac. Sci. Technol. B 5 1062
[36]	Walukiewicz W 1988 J. Vac. Sci. Technol. B 6 1257
[37]	Janotti A and van de Wall C G 2005 Appl. Phys. Lett. 87 122102
[38]	Walle C G V, Stampfl C and Neugebauer J 1998 J. Cryst.Growth 189-190 505
[39]	Onuma T, Chichibu S F, Uedono A, Sota T, Cantu P, Katona T M, Keading J F, Keller S, Mishra U K, Nakamura S and Denbarrs S P 2004 J. Appl. Phys. 95 2495
[40]	Zhou H B and Jin S 2013 Chin. Phys. B 22 076104

Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions

Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions

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