›› 2014, Vol. 23 ›› Issue (11): 118508-118508.doi: 10.1088/1674-1056/23/11/118508

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

廖英杰a b, 娄艳辉a, 王照奎a, 廖良生a   

  1. a Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China;
    b College of Electronic Engineering, Jiujiang University, Jiujiang 332005, China
  • 收稿日期:2014-03-14 修回日期:2014-04-26 出版日期:2014-11-15 发布日期:2014-11-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61307036 and 61307037), the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), China, and the University Science Research Project of Jiangsu Province, China (Grant No. 12KJB510028).

Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

Liao Ying-Jie (廖英杰)a b, Lou Yan-Hui (娄艳辉)a, Wang Zhao-Kui (王照奎)a, Liao Liang-Sheng (廖良生)a   

  1. a Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China;
    b College of Electronic Engineering, Jiujiang University, Jiujiang 332005, China
  • Received:2014-03-14 Revised:2014-04-26 Online:2014-11-15 Published:2014-11-15
  • Contact: Wang Zhao-Kui E-mail:zhaokuiwang@hotmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61307036 and 61307037), the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), China, and the University Science Research Project of Jiangsu Province, China (Grant No. 12KJB510028).

摘要: A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.

关键词: indium zinc oxide (IZO), organic light emitting device (OLED), leak current, lifetime

Abstract: A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.

Key words: indium zinc oxide (IZO), organic light emitting device (OLED), leak current, lifetime

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
81.05.Fb (Organic semiconductors) 81.16.Rf (Micro- and nanoscale pattern formation)