Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

doi:10.1088/1674-1056/22/8/088401

中国物理B ›› 2013, Vol. 22 ›› Issue (8): 88401-088401.doi: 10.1088/1674-1056/22/8/088401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

赵璧君, 陈鑫, 任志伟, 童金辉, 王幸福, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

收稿日期:2012-12-18 修回日期:2013-01-18 出版日期:2013-06-27 发布日期:2013-06-27
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2011J4300018).

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Received:2012-12-18 Revised:2013-01-18 Online:2013-06-27 Published:2013-06-27
Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2011J4300018).

摘要/Abstract

摘要： The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (J_sc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

关键词: metal-organic chemical vapor deposition, GaN-based solar cells, InGaN/GaN multiple quantum wells

Abstract: The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (J_sc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

Key words: metal-organic chemical vapor deposition, GaN-based solar cells, InGaN/GaN multiple quantum wells

中图分类号: (Photoelectric conversion)

84.60.Jt

85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.30.De (Semiconductor-device characterization, design, and modeling)

赵璧君, 陈鑫, 任志伟, 童金辉, 王幸福, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体. Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content[J]. 中国物理B, 2013, 22(8): 88401-088401.

Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体). Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content[J]. Chin. Phys. B, 2013, 22(8): 88401-088401.

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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

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