中国物理B ›› 2011, Vol. 20 ›› Issue (11): 116801-116801.doi: 10.1088/1674-1056/20/11/116801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Growth and properties of wide spectral white light emitting diodes

谢自力, 张荣, 傅德颐, 刘斌, 修向前, 华雪梅, 赵红, 陈鹏, 韩平, 施毅, 郑有炓   

  1. School of Electronics and Engineering, Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China
  • 收稿日期:2010-11-29 修回日期:2011-07-06 出版日期:2011-11-15 发布日期:2011-11-15
  • 基金资助:
    Project supported by the Special Funds for Major State Basic Research Project, China (Grant No. 2011CB301900), the Hi-tech Research Project, China (Grant No. 2009AA03A198), the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003), the Nature Science Foundation of Jiangsu Province, China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China.

Growth and properties of wide spectral white light emitting diodes

Xie Zi-Li(谢自力)†, Zhang Rong(张荣), Fu De-Yi(傅德颐), Liu Bin(刘斌),Xiu Xiang-Qian(修向前), Hua Xue-Mei(华雪梅), Zhao Hong(赵红), Chen Peng(陈鹏),Han Ping(韩平), Shi Yi(施毅), and Zheng You-Dou(郑有炓)   

  1. School of Electronics and Engineering, Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China
  • Received:2010-11-29 Revised:2011-07-06 Online:2011-11-15 Published:2011-11-15
  • Supported by:
    Project supported by the Special Funds for Major State Basic Research Project, China (Grant No. 2011CB301900), the Hi-tech Research Project, China (Grant No. 2009AA03A198), the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003), the Nature Science Foundation of Jiangsu Province, China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China.

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摘要： Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.

Abstract: Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.

Key words: metal-organic chemical vapor deposition, GaN/InGaN multi-quantum wells, group III-V semiconductor, wide spectral white light

中图分类号:  (Diffusion of adsorbates, kinetics of coarsening and aggregation)

  • 68.43.Jk
66.30.H- (Self-diffusion and ionic conduction in nonmetals) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.55.A- (Nucleation and growth)