中国物理B ›› 2013, Vol. 22 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/22/2/028501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Discussion of the metric in characterizing single-event effect induced by heavy ions

张科营, 张凤祁, 罗尹虹, 郭红霞   

  1. Northwest Institute of Nuclear Technology, Xi'an 710024, China
  • 收稿日期:2012-02-13 修回日期:2012-06-20 出版日期:2013-01-01 发布日期:2013-01-01

Discussion of the metric in characterizing single-event effect induced by heavy ions

Zhang Ke-Ying (张科营), Zhang Feng-Qi (张凤祁), Luo Yin-Hong (罗尹虹), Guo Hong-Xia (郭红霞 )   

  1. Northwest Institute of Nuclear Technology, Xi'an 710024, China
  • Received:2012-02-13 Revised:2012-06-20 Online:2013-01-01 Published:2013-01-01

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摘要： Single-event effect (SEE) is the most serious problem in space environment. The modern semiconductor technology worries about the feasibility of the linear energy transfer (LET) as metric in characterizing SEE induced by heavy ions. In the paper, we calibrate the detailed static random access memory (SRAM) cell structure model of advanced field programmable gate array (FPGA) device using the computer-aided design tool, and calculate the heavy ion energy loss in multi-layer metal utilizing Geant4. Based on the heavy ion accelerator experiment and numerical simulation, it is proved that the metric of LET at the device surface, with ignoring the top metal material in advanced semiconductor device, would underestimate the SEE. In the SEE evaluation in space radiation environment the top-layers on the semiconductor device must be taken into consideration.

关键词: cross-section curve, metric, linear energy transfer, field programmable gate array

Abstract: Single-event effect (SEE) is the most serious problem in space environment. The modern semiconductor technology worries about the feasibility of the linear energy transfer (LET) as metric in characterizing SEE induced by heavy ions. In the paper, we calibrate the detailed static random access memory (SRAM) cell structure model of advanced field programmable gate array (FPGA) device using the computer-aided design tool, and calculate the heavy ion energy loss in multi-layer metal utilizing Geant4. Based on the heavy ion accelerator experiment and numerical simulation, it is proved that the metric of LET at the device surface, with ignoring the top metal material in advanced semiconductor device, would underestimate the SEE. In the SEE evaluation in space radiation environment the top-layers on the semiconductor device must be taken into consideration.

Key words: cross-section curve, metric, linear energy transfer, field programmable gate array

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
61.82.Fk (Semiconductors)