Bipolar resistive switching in BiFe0.95Zn0.05O3 films

doi:10.1088/1674-1056/22/10/107702

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107702-107702.doi: 10.1088/1674-1056/22/10/107702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Bipolar resistive switching in BiFe_0.95Zn_0.05O₃ films

袁学勇^a, 罗丽荣^b, 吴迪^c, 徐庆宇^a

a Department of Physics, Southeast University, Nanjing 211189, and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China;
b School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
c Department of Materials Science and Engineering, Nanjing University, Nanjing 210008, China

收稿日期:2013-03-30 修回日期:2013-05-10 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51172044), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2011617), the National Key Project for Basic Research of China (Grant No. 2010CB923404), the 333 Project of Jiangsu Province, by NCET-09-0296, the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, and Southeast University (Grant No. Seujq201106).

Bipolar resistive switching in BiFe_0.95Zn_0.05O₃ films

Yuan Xue-Yong (袁学勇)^a, Luo Li-Rong (罗丽荣)^b, Wu Di (吴迪)^c, Xu Qing-Yu (徐庆宇)^a

a Department of Physics, Southeast University, Nanjing 211189, and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China;
b School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
c Department of Materials Science and Engineering, Nanjing University, Nanjing 210008, China

Received:2013-03-30 Revised:2013-05-10 Online:2013-08-30 Published:2013-08-30
Contact: Xu Qing-Yu E-mail:xuqingyu@seu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51172044), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2011617), the National Key Project for Basic Research of China (Grant No. 2010CB923404), the 333 Project of Jiangsu Province, by NCET-09-0296, the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, and Southeast University (Grant No. Seujq201106).

摘要/Abstract

摘要： Bipolar resistive switching is studied in BiFe_0.95Zn_0.05O₃ films prepared by pulsed laser deposition on (001) SrTiO₃ substrate, with LaNiO₃ as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are observed in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state (HRS) to the low resistance state (LRS) of over three orders of magnitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.

关键词: multiferroics, resistive switching

Abstract: Bipolar resistive switching is studied in BiFe_0.95Zn_0.05O₃ films prepared by pulsed laser deposition on (001) SrTiO₃ substrate, with LaNiO₃ as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are observed in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state (HRS) to the low resistance state (LRS) of over three orders of magnitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.

Key words: multiferroics, resistive switching

中图分类号: (Multiferroic/magnetoelectric films)

77.55.Nv

72.20.Ht (High-field and nonlinear effects) 73.50.Fq (High-field and nonlinear effects)

袁学勇, 罗丽荣, 吴迪, 徐庆宇. Bipolar resistive switching in BiFe_0.95Zn_0.05O₃ films[J]. 中国物理B, 2013, 22(10): 107702-107702.

Yuan Xue-Yong (袁学勇), Luo Li-Rong (罗丽荣), Wu Di (吴迪), Xu Qing-Yu (徐庆宇). Bipolar resistive switching in BiFe_0.95Zn_0.05O₃ films[J]. Chin. Phys. B, 2013, 22(10): 107702-107702.

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Bipolar resistive switching in BiFe_0.95Zn_0.05O₃ films

Bipolar resistive switching in BiFe_0.95Zn_0.05O₃ films

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