Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 18503-018503.doi: 10.1088/1674-1056/22/1/018503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
何敖东a b, 宋志棠a, 刘波a, 钟旻a, 王良咏a, 吕业刚a b, 封松林a
He Ao-Dong (何敖东)a b, Song Zhi-Tang (宋志棠)a, Liu Bo (刘波)a, Zhong Min (钟旻)a, Wang Liang-Yong (王良咏)a, Lü Ye-Gang (吕业刚)a b, Feng Song-Lin (封松林)a
摘要: In this paper, chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but static etch rate firstly increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.
中图分类号: (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)