中国物理B ›› 2002, Vol. 11 ›› Issue (3): 293-297.doi: 10.1088/1009-1963/11/3/318

• • 上一篇    下一篇

Crystallization of Ge2Sb2Te5 phase-change optical disk media

刘波, 阮昊, 干福熹   

  1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 收稿日期:2001-09-12 修回日期:2001-10-04 出版日期:2002-03-13 发布日期:2005-06-13
  • 基金资助:
    Project supported by the Shanghai Applied Physics Centre and the National Natural Science Foundation of China (Grant No. 59832060).

Crystallization of Ge2Sb2Te5 phase-change optical disk media

Liu Bo (刘波), Ruan Hao (阮昊), Gan Fu-Xi (干福熹)   

  1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • Received:2001-09-12 Revised:2001-10-04 Online:2002-03-13 Published:2005-06-13
  • Supported by:
    Project supported by the Shanghai Applied Physics Centre and the National Natural Science Foundation of China (Grant No. 59832060).

PDF (PC)

867

赞

摘要： In this paper, the crystallization behaviour of amorphous Ge2Sb2Te5 thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge2Sb2Te5 thin films, the crystallization temperature is about 200℃ and the melting temperature is 546.87℃. The activation energy for the crystallization, Ea, is 2.25eV. The crystallization dynamics for Ge2Sb2Te5 thin films obeys the law of nucleation and growth reaction. The sputtered Ge2Sb2Te5 films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge2Sb2Te5 phase-change optical disk.

Abstract: In this paper, the crystallization behaviour of amorphous Ge2Sb2Te5 thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge2Sb2Te5 thin films, the crystallization temperature is about 200℃ and the melting temperature is 546.87℃. The activation energy for the crystallization, Ea, is 2.25eV. The crystallization dynamics for Ge2Sb2Te5 thin films obeys the law of nucleation and growth reaction. The sputtered Ge2Sb2Te5 films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge2Sb2Te5 phase-change optical disk.

Key words: Ge2Sb2Te5, phase-change, initialization, face-centred-cubic

中图分类号:  (Optical storage systems, optical disks)

  • 42.79.Vb
78.66.Jg (Amorphous semiconductors; glasses) 61.50.Ks (Crystallographic aspects of phase transformations; pressure effects) 61.43.Dq (Amorphous semiconductors, metals, and alloys) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 68.55.-a (Thin film structure and morphology) 42.62.-b (Laser applications)