Mechanism of amorphous Ge2Sb2Te5  removal during chemical mechanical planarization in acidic H2O2 slurry

doi:10.1088/1674-1056/22/1/018503

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 18503-018503.doi: 10.1088/1674-1056/22/1/018503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry

何敖东^{a b}, 宋志棠^a, 刘波^a, 钟旻^a, 王良咏^a, 吕业刚^{a b}, 封松林^a

a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2012-05-03 修回日期:2012-06-27 出版日期:2012-12-01 发布日期:2012-12-01
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800), and the Chinese Academy of Sciences (Grant No. 20110490761).

Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry

He Ao-Dong (何敖东)^{a b}, Song Zhi-Tang (宋志棠)^a, Liu Bo (刘波)^a, Zhong Min (钟旻)^a, Wang Liang-Yong (王良咏)^a, Lü Ye-Gang (吕业刚)^{a b}, Feng Song-Lin (封松林)^a

a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

Received:2012-05-03 Revised:2012-06-27 Online:2012-12-01 Published:2012-12-01
Contact: Liu Bo E-mail:liubo@mail.sim.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800), and the Chinese Academy of Sciences (Grant No. 20110490761).

摘要/Abstract

摘要： In this paper, chemical mechanical planarization (CMP) of amorphous Ge₂Sb₂Te₅ (a-GST) in acidic H₂O₂ slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H₂O₂ concentration and gradually increases with the increase in H₂O₂ concentration, but static etch rate firstly increases and then slowly decreases with the increase in H₂O₂ concentration. To understand the chemical reaction behavior of H₂O₂ on the a-GST surface, potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H₂O₂. Finally, a possible removal mechanism of a-GST in different concentrations of H₂O₂ in the acidic slurry is described.

关键词: H₂O₂, chemical mechanical planarization, Ge₂Sb₂Te₅

Abstract: In this paper, chemical mechanical planarization (CMP) of amorphous Ge₂Sb₂Te₅ (a-GST) in acidic H₂O₂ slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H₂O₂ concentration and gradually increases with the increase in H₂O₂ concentration, but static etch rate firstly increases and then slowly decreases with the increase in H₂O₂ concentration. To understand the chemical reaction behavior of H₂O₂ on the a-GST surface, potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H₂O₂. Finally, a possible removal mechanism of a-GST in different concentrations of H₂O₂ in the acidic slurry is described.

Key words: H₂O₂, chemical mechanical planarization, Ge₂Sb₂Te₅

中图分类号: (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

85.40.-e

81.65.-b (Surface treatments) 52.77.Bn (Etching and cleaning) 81.65.Cf (Surface cleaning, etching, patterning)

何敖东, 宋志棠, 刘波, 钟旻, 王良咏, 吕业刚, 封松林. Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry[J]. Chin. Phys. B, 2013, 22(1): 18503-018503.

He Ao-Dong (何敖东), Song Zhi-Tang (宋志棠), Liu Bo (刘波), Zhong Min (钟旻), Wang Liang-Yong (王良咏), Lü Ye-Gang (吕业刚), Feng Song-Lin (封松林). Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry[J]. Chin. Phys. B, 2013, 22(1): 18503-018503.

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Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry

Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry

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