中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97804-097804.doi: 10.1088/1674-1056/21/9/097804

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix

吴志永, 刘克新, 任晓堂   

  1. State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, Peking University, Beijing 100871, China
  • 收稿日期:2011-12-09 修回日期:2012-04-18 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the State Key Laboratory of Nuclear Physics and Technology, China.

Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix

Wu Zhi-Yong (吴志永), Liu Ke-Xin (刘克新), Ren Xiao-Tang (任晓堂)   

  1. State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, Peking University, Beijing 100871, China
  • Received:2011-12-09 Revised:2012-04-18 Online:2012-08-01 Published:2012-08-01
  • Contact: Wu Zhi-Yong E-mail:zywu75@pku.edu.cn
  • Supported by:
    Project supported by the State Key Laboratory of Nuclear Physics and Technology, China.

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摘要： Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embeded in an SiO2 matrix is compared with that of unpassivated ones. We investigate the relative enhancement of PL intensity (IR) as a function of annealing temperature and implanted Si ion dose. The IR increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization via varying the annealing temperature. The increase in IR with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.

关键词: ion implantation, nanocrystals, photoluminescence, dangling bond

Abstract: Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embeded in an SiO2 matrix is compared with that of unpassivated ones. We investigate the relative enhancement of PL intensity (IR) as a function of annealing temperature and implanted Si ion dose. The IR increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization via varying the annealing temperature. The increase in IR with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.

Key words: ion implantation, nanocrystals, photoluminescence, dangling bond

中图分类号:  (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

  • 78.67.-n
81.40.Tv (Optical and dielectric properties related to treatment conditions) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)